Abstract We present the theoretical analysis of steady state regimes and lowfrequency
noises in quasi-ballistic FETs. The noise analysis is based on the Langevin
approach, which accounts for the microscopic sources of fluctuations originated from
intrachannel electron scattering. The general formulas for local fluctuations of the
carrier concentration, velocity and electrostatic potential as well, as their distributions
along the channel are found as functions of applied voltage/current. Two circuit
regimes with stabilized current and stabilized voltage are considered. The noise
intensities for the devices with different electron ballisticity in the channel are
compared.
We suggest that the presented analysis makes better comprehension of physics of
electron transport and fluctuations in quasi-ballistic FETs, improves their theoretical
description and can be useful for device simulation and design.