Amplifier Configuration Research Articles

Covering a 1280–1495 nm (215 nm) wideband high-gain bismuth-doped fiber amplifier with only 1240 nm pumping

In this study, two bismuth-doped fibers were fabricated by atomic layer deposition (ALD) combined with modified chemical vapor deposition (MCVD) technology. For a dual-pump amplification configuration, 1240 and 1310 nm pumping the BDF simultaneously, when the 1240 nm pump power changes, it has little impact on the gain. The 1310 nm pump wavelength overlaps with the emission range of bismuth active centers associated with phosphorus (BACs-P), potentially suppressing its excitation. The experiment reveals that the emission range of BACs associated with silicon (BACs-Si) overlaps the absorption range of BACs-P, indicating that BACs likely exist for their reabsorption properties. Furthermore, enhancing the reabsorption properties can increase the luminescent intensity of BACs-Si in the 1420 nm region with only a 1240 nm pump. The gain of peaks at 1340 and 1420 nm exceeds 31.5 dB at a −23 dBm input signal. Notably, the gain within the 1280–1495 nm range exceeded 15 dB, achieving a bandwidth of 215 nm. This holds significant promise for applications in artificial intelligence, autonomous driving, and other fields with high-capacity communication demands.

Coherent instabilities in thulium-based fiber amplifiers induced by laser frequency modulation.

Frequency modulation of narrow-linewidth lasers can cause coherent backscattering in cladding-pumped fiber amplifiers. This detrimental effect can be observed in Tm-based fiber amplifiers and can be an additional limitation for power scaling applications. We investigate such instabilities in Tm- and Tm/Ho-doped fiber amplifiers for a wide range of design parameters (active fiber length, pumping scheme, dopant type) and operation regimes (laser frequency tuning rate, amplifier gain). For each amplifier configuration, the backward-propagating (BP) signal is found to peak at a specific laser frequency tuning rate, with an amplitude and a frequency that increase with increasing amplifier gain and fiber length.

10 W, 2 mJ-level ns all-fiber amplifier at 2.8 µm.

In this Letter, we demonstrate a single-stage erbium-doped fluoride fiber amplifier composed of two spliced large core fibers with respective diameters of 85 and 130 µm. An optical parametric generator (OPG) operating at a 5 kHz repetition rate, and providing ∼2 ns pulse duration, and an average output power of 500 mW at a wavelength of 2.8 µm was used as a seed source. This nanosecond amplifier configuration achieved an average output power of 10 W with a record pulse energy of 2 mJ, corresponding to 1 MW of output peak power. The maximum slope efficiency of this hybrid amplifier is 21% with respect to the total incident pump power at 940 nm. The presented master-oscillator power-amplifier (MOPA) configuration shows its potential for further power and energy scaling.

Field trial of stable radio frequency transfer system in 200 km metropolitan optical fiber link.

In this paper, we demonstrate stable radio frequency (RF) transfer via metropolitan optical fiber link in the Beijing area. The phase variation of the RF signal is compensated by a phase conjugation method incorporating two high-performance phase-locked loops. The wavelength conversion module extends the transmission length to 200 km with only two parallel 50 km dark optical fibers available. We optimize the configuration of dispersion compensation and optical amplification due to the high loss (0.31 dB/km) of the optical fiber link. At the same time, comparative experiments verify the short-term instability limitation that arises from the group velocity dispersion of the optical fiber link. The measured standard Allan deviation of the 2.4GHz RF transmission system with dispersion compensation is 4.5 × 10-14/1 and 2.6 × 10-17/20 000s, which is superior to that of the reference rubidium clock. The short-term instability of the system is deteriorated to 2.5 × 10-13/1s without dispersion compensation.

Design of an operational transconductance amplifier configuration using machine learning

Design of an operational transconductance amplifier configuration using machine learning

High-efficiency Yb:YAG thin-disk chirped pulse amplifier delivering 884-femtosecond laser with tunable repetition rates and high stability

We experimentally demonstrated a compact, highly efficient, stable, chirped pulse amplification (CPA) thin-disk regenerative system with a tunable repetition rate. The laser head consists of a 9 at. % Yb:YAG thin-disk with a diameter of 8.8 mm and a thickness of 150 μm, is designed for a 48-pump pass configuration. In CPA-based regenerative amplifier configuration, a maximal output power of 85 W at 500 kHz is achieved with a conversion efficiency of 53.1 %. This corresponds to a pulse energy of 170 μJ. To the best of our knowledge, this is the highest conversion efficiency in CPA thin-disk regenerative amplifiers. The pulse width is compressed to 884 fs with a pair of grating, resulting in a peak power of 192 MW. At 85 W, a near diffraction limit beam quality factor M2 of 1.40 is measured, which is essential in precision applications. In addition, remarkable long-term power stability is confirmed with a root-mean-square (RMS) fluctuation of 0.12 % over a 24-hour duration. The reported femtosecond amplifier is believed to be a promising tool for various applications such as extreme manufacturing, terahertz spectroscopy, etc.

Fast and low power SiPM amplifier operating in a wide temperature range

The next generation of Ring Imaging CHerenkov detectors in high energy physics experiments may use SiPMs as photon sensing elements. This upgrade is necessary to achieve greater detector granularity and speed, however SiPMs need to be cooled down to cryogenic temperatures to detect single photons in high-radiation environments and avoid being overwhelmed by the presence of “dark signals”. It is therefore necessary to study and characterize SiPM models in dedicated campaigns, using a custom-built amplifying chain that can also operate in an extended temperature range, between 80 K and 300 K, for detector characterization purposes. The proposed amplifier configuration consists of two amplifying stages and achieves low jitter values (<10−20psRMS) thanks to the low electronic noise and the high amplifier bandwidth. The circuit achieves a signal bandwidth of 500MHz<BW<1GHz, a phase margin of approximately 45° and a power consumption of about 65−135mW. The amplifier prototype unit can be adjusted to cover the considered temperature range and still achieve low jitter values.

High-resolution optical coherence tomography using a multi-level diffractive lens.

We present a high-resolution optical coherence tomography (OCT) imaging system that utilizes a multi-level diffractive lens (MDL) to enhance lateral resolution. The system utilizes a polygon-based swept laser source with a center wavelength of 1,000 nm to achieve an axial resolution of 5.6 µm and an imaging depth of 1.4 mm using the bidirectional configuration of a semiconductor optical amplifier. The MDL significantly enhances the lateral resolution of the system, providing an extended depth of focus of 550 µm with an average lateral resolution of 8.5 µm. The effectiveness of this setup is validated through imaging of phantom and onion samples, demonstrating the system's capability for high-resolution deep tissue imaging. These findings underscore the potential of compact MDLs to significantly enhance the performance of OCT systems, offering a promising direction for advanced high-resolution imaging applications.

All-optical output power stabilization of double-clad Er:Yb amplifiers using 1064 nm signal injection

We present a novel technique for all-optical stabilization of the output power of telecom band amplifiers based on double-clad (DC) erbium-ytterbium (Er:Yb) doped fibers. The proposed method relies on the utilization of the undesirable energy back-transfer effect which occurs in DC Er:Yb active fibers. A feedback loop is built based on a low-power 1064 nm laser, which is coupled into the Er:Yb fiber along with the 1550 nm seed. The auxiliary 1 µm signal partially extracts the Yb-ion energy, altering the gain at the design wavelength. The stabilization technique was verified for two types of fibers, to demonstrate the feasibility of our approach regardless of the type of DC Er:Yb fiber used, its characteristics, and the amplifier configuration. A long-term stability improvement by a factor of 117 was achieved, reaching a deviation of 0.8 µ W, for 100 s integration time.

Switching-mode audio amplifier based on a ΔΣ A/D converter

The article describes the design and implementation of a modular hardware platform intended for testing and measuring various configurations of switching-mode audio amplifiers based on sigma-delta modulation. Two single-channel power amplifier modules were designed and manufactured, along with a stereophonic module serving as the basic source of modulated signals. Additionally, measurements were conducted on the fundamental parameters of the completed amplifier, such as harmonic distortion level, dynamic range, and output power. The developed platform serves as a foundation for modifications and further advancement in the technology of building switching-mode audio amplifiers.

Robust low-noise 795-nm single-frequency fiber laser with continuous frequency tuning

This study presents a highly efficient and low-noise all-fiber single-frequency (SF) 795-nm laser system realized using a simple and robust single-pass frequency-doubling configuration. The foundation of the system is a 1590-nm erbium-doped fiber amplifier operating in a master oscillator power amplifier configuration seeded by a distributed feedback semiconductor laser at 1590.52 nm. The main amplifier exhibits an exceptional amplification efficiency of 30.5 %. By utilizing a periodically poled lithium niobate waveguide, the 795-nm laser is frequency-doubled with an output power reaching 2.3 W, corresponding to an optical efficiency of 44 % of the fundamental laser. Crucial to its application in precision measurements and quantum technologies, the SF 795-nm laser exhibits a relative intensity noise close to −150 dBc/Hz in the frequency range of 0.1 to 10 MHz. Additionally, a continuous frequency-tuning range of 11.7 GHz is achieved by modulating the current with a 2.5-mA 1-Hz triangular wave. Notably, this is the first report on an all-fiber SF 795-nm laser system.

Dense wavelength division multiplexing scheme based on effective distributed inline light fiber Raman amplifier configuration

Abstract This paper demonstrated the dense wavelength division multiplexing scheme based on effective distributed inline light fiber Raman amplifier configuration. Various forward/backward and bidirectional pumping power configurations are studied versus fiber reach. Output light signal power is demonstrated against fiber reach without Raman amplification technique. Output light signal power in the forward Raman amplification scheme is clarified with pumping power of both 500 mW and 700 mW in various fiber channel configurations. As well as output light signal power in the backward Raman amplification scheme with pumping power of both 500 mW and 700 mW in various fiber channel configurations. Amplification Raman gain parameter coefficient is demonstrated with various values of pumping power pump based on various fiber channel configurations. Backward amplification net parameter gain is studied for different single mode/true wave/freelight fibers channel configuration at different both pumping power values and fiber reach. As well as the forward amplification net parameter gain is clarified for different single mode/true wave/freelight fibers channel configuration at different both pumping power values and fiber reach.

Performance analysis of hybrid optical amplifiers for multichannel wavelength division multiplexed (WDM) optical networks

Abstract Hybrid Optical Amplifier (HOA) has made a significant change in Wavelength Division Multiplexed (WDM) optical networks. We have proposed diverse hybrid optical amplifier configurations for the better performance of WDM optical networks. These configurations are SOA-EDFA, EDFA-EDFA and EDFA-Raman amplifier for 24 channels WDM optical networks at 10 Gbps with channel spacing of 0.8 nm. The performance of the systems is evaluated on the behalf of different parameters such as, quality factor, eye diagram, bit error rate and output power. The efforts are made to optimize these parameters. From the results, it is assessed that EDFA-Raman configuration gives superior results as compared to EDFA-EDFA configuration and SOA-EDFA hybrid optical amplifier configuration for long distance. Further it is also observed that EDFA-Raman hybrid optical amplifier configuration is suitable for high data rates up to 20 Gbps.

All fiber single frequency pulsed Yb doped laser source scaling up to 600 uJ at 1 kHz

An all-fiber based high energy single frequency pulsed laser at 1030 nm with fixed repetition rate of 1 kHz was demonstrated. The system adopts a master oscillator power amplifier configuration. In the main amplification stage, we employed a highly doped, very large core diameter of 50 μm YDF fiber as the laser gain media. 670 μJ, 500 ns pulse train was obtained, corresponding to a peak power of 1.34 kW. Such a high-peak-power and high-repetition-rate SF source is well suited for long range coherent imaging, optical remote sensing, and coherent interferometry, etc.

Analog CMOS Design in Nanometer Regime

There is no doubt that the short-channel effects have affected the analysis and design of modern analog CMOS integrated circuits significantly. Thus, models that take into account these effects must be adopted in order to obtain more accurate results. In this paper, the AC small-signal low-frequency equivalent circuit of the short-channel MOSFET transistor is developed using an appropriate model. The impact of short-channel effects on the operation of basic building blocks of analog integrated circuits such as basic amplifier configurations, cascode stage, differential amplifier and composite transistor is investigated quantitatively. Additionally, the nonlinear distortion is investigated using the adopted model.

Enhancing Gain Uniformity in WDM Networks Across C and L Bands Through Hybrid Optical Amplifier Integration

This study explores strategies for optimizing EDFA gain in the context of (WDM and DWDM systems. By reviewing recent literature, we investigate various approaches to enhance EDFA performance, considering factors such as input power, pump power, and fiber length. Our analysis covers optimization algorithms, gain flattening techniques, adaptive gain equalization methods, and hybrid amplifier configurations. Additionally, we examine studies addressing nonlinear effects and the allocation of pump power to maximize gain efficiency. Recent advancements, including machine learning-based approaches and novel gain equalization techniques using phase-shifted fiber Bragg gratings, are also discussed. The findings underscore the significance of tailored EDFA gain optimization methods for improving the overall performance and efficiency of WDM and DWDM systems in optical communication networks.

Novel complementary Sziklai pair based high gain low noise small-signal amplifiers

&lt;span lang="EN-US"&gt;A new paired configuration of opposite polarity BJTs, the “complementary Sziklai pair” is introduced in the series of multi-BJT-based devices like Darlington and Sziklai pair, and its viability is tested in small-signal common emitter (CE) and common collector (CC) amplifier configurations. The Darlington and Sziklai both face the problem of poor frequency response at a higher frequency which is addressed by the proposed configuration. The proposed pair with CE amplifier holds class-A amplification property with a high voltage gain of 200.05, a high current gain of 11.62, wider bandwidth of 1.64 MHz, and a low THD of 1.29E-6%, hence supports the potential of wide applicability in analog communication. Similarly, the proposed pair with CC configuration produces approximately a unit current gain of 0.99 with wider bandwidth of 1.90 MHz and low THD of 1.76E-6%, therefore it can be used as a current buffer in a generalized current follower circuit. Conclusively, the device structure of this new BJT pair may be considered the third consecutive member of the series of Darlington pair and Sziklai pair. The layout of the proposed CE and CC amplifier occupy small areas of 158.30 μm&lt;sup&gt;2&lt;/sup&gt; (10.23×15.47 μm) and 141.16 μm&lt;sup&gt;2&lt;/sup&gt; (10.20×13.84 μm) respectively in 180 nm process technology.&lt;/span&gt;

On the Application of Thévenin Equivalent Circuits to the Analysis of Vacuum Tube Circuits

In this paper, we express Thévenin equivalent circuits seen looking into the terminals of the small-signal model of the vacuum tube triode in terms of the Thévenin equivalent circuits seen looking out of the other terminals and apply them to the analysis of the common-cathode, common-plate, and common-grid single-tube amplifier configurations, as well as a differential pair amplifier. This is an adaptation of equivalent circuit techniques for transistor circuits pioneered by Marshall Leach. The use of equivalent circuits can yield intuitive solutions that avoid solving sets of equations.

SIMULTANEOUS COMPENSATION OF SECOND AND THIRD ORDER DISPERSION IN CPA LASER SYSTEMS

This paper presents a theoretical study aimed at solving the problem of compensation for second and third order dispersion in CPA laser systems. We study the propagation of light pulses generated by a Ti-Sapphire master oscillator along the path of a stretcher-amplifiers-compressor. The wave equation and dispersion balance equations are used to analyze various Ti-Sapphire amplifier configurations. The research results include the values of the deviation of the compressor length and the angle of incidence of the light pulse on the input diffraction grating of the compressor. Different versions of amplifiers differ in the number of passes of a light pulse through Ti-Sapphire crystals and in the geometric profile of the crystals. The results obtained are presented in the Table. This research is essential for the development of more efficient CPA laser systems.

High power GaSb-based superluminescent diode with cascade cavity suppression waveguide geometry and ultra-low antireflection coating

We report on a GaSb-based superluminescent diode optimized for high-power broadband operation around a wavelength of 2 μm. The high optical power was achieved by the high-quality epitaxial InGaSb/AlGaAsSb type-I quantum well gain material, which was processed into a double-pass amplification configuration. To prevent lasing at high current injection while enabling strong amplified spontaneous emission, a cascade cavity suppression waveguide geometry was designed to connect the vertical rear facet with the reflectivity-suppressed angled front facet. A Ta2O5/SiO2 ultra-low antireflection coating with a minimum reflectivity of 0.04% was applied to the front facet for further cavity suppression. This combination allowed the superluminescent diodes to demonstrate a record high single-transverse-mode output power of up to 152 mW under continuous-wave operation at room temperature, with a broad spectral band of 42 nm full width at half maximum. A 25% promotion in optical power has been realized compared to current state-of-the-art devices in this wavelength range, without sacrificing spectral bandwidth. The high-power spectral density characteristics, along with a good beam quality, are well suited for absorption spectroscopy applications and hybrid integration with silicon technology.