Amorphous Silicon Research Articles

Reliable Prediction of Solar Photovoltaic Power and Module Efficiency using Bayesian Surrogate Assisted Explainable Data-Driven Model

This study proposes a Bayesian surrogate-driven explainable deep neural network model to predict and interpret the module efficiency and maximum output power of three commercially available photovoltaic modules: monocrystalline silicon, polycrystalline silicon, and amorphous silicon during the winter season. In addition, the influence of the photovoltaic material and ambient conditions on the predicted power and module efficiency is investigated. The model inputs include solar irradiance, module material (monocrystalline, polycrystalline, and amorphous silicon), season of the year (months), and time of day (morning to evening). Experiments were conducted on these three modules during the winter using data from Rawalpindi, Pakistan. These data were then fed into the deep neural network model to train and yield predictions. Several preprocessing techniques such as logarithmic transformation, square root, cube root, reciprocal, and exponential transformations are employed to improve the linearity of distributed data. For hyper-parameters optimization, Gaussian process, gradient boost regression trees, and random forest are used. The results show that the optimal deep neural network using random forest surrogate model along with square root and exponential transformation is able to predict the maximum power output and module efficiency of the considered photovoltaic modules for the entire investigated period with a correlation coefficient, R2 = 0.998. The least accurate model (R2=0.991) is a Gaussian process using simple data distribution. These results hold valuable insights for predicting and optimizing the performance of other solar photovoltaic modules in various climates and different seasons of the year.

Effect of doping with M (M=Al, Pd, Ti, Ge) on the electronic structure and hydrogen diffusion behavior of amorphous silicon

Amorphous silicon (a-Si) models doped with Pd, Ge, Al, and Ti (a-Si/M) at three different doping ratios are generated using Ab initio Molecular Dynamics (AIMD) high-temperature annealing, followed by analysis utilizing first-principles method. The electronic structure calculations reveal strong interactions between Al, Ge and Si, while interaction between Pd, Ti and Si are relatively weak. Moderate doping of Pd and Ti can reconstruct the a-Si surface, reduce the adsorption energy of H on the surface, and increase the Si-Si atomic gap. This will greatly reduce the energy barrier for H to diffuse on the surface and to the subsurface.

Conversion of 30 W laser light at 1064 nm to 20 W at 2128 nm and comparison of relative power noise

Abstract All current gravitational wave (GW) observatories operate with Nd:YAG lasers with a wavelength of 1064 nm. The sensitivity of future GW observatories could benefit significantly from changing the laser wavelength to approximately 2 µm combined with exchanging the current room temperature test mass mirrors with cryogenically cooled crystalline silicon test masses with mirror coatings from amorphous silicon and amorphous silicon nitride layers. Laser light of the order of ten watts with a low relative power noise (RPN) would be required. Here we use a laboratory-built degenerate optical parametric oscillator to convert the light from a high-power Nd:YAG laser to 2128 nm. With an input power of 30 W, we achieve an output power of 20 W, which corresponds to an external conversion efficiency of approximately 67%. We find that the RPN spectrum marginally increases during the wavelength conversion process. Our result is an important step in the development of low-noise light around 2 µm based on existing low-noise Nd:YAG lasers.

Retina-Inspired X-Ray Optoelectronic Synapse Using Amorphous Ga2O3 Thin Film.

Machine vision techniques are widely applied for object identification in daily life and industrial production, where images are captured and processed by sensors, memories, and processing units sequentially. Neuromorphic optoelectronic synapses, as a preferable option to promote the efficiency of image recognition, are hotly pursued in non-ionizing radiation range, but rarely in ionizing radiation including X-rays. Here, the study proposes an X-ray optoelectronic synapse using amorphous Ga2O3 (a-Ga2O3) thin film. Boosted by the interfacial VO 2+ defects and its slow neutralization rate, the enhanced electron tunneling process at metal/a-Ga2O3 interface produces remarkable X-ray-induced post-synaptic current, contributing to a sensitivity of 20.5, 64.3, 164.1 µC mGy-1 cm-2 for the 1st, 5th, and 10th excitation periods, respectively. Further, a 64×64 imaging sensor is constructed on a commercial amorphous Si (a-Si) thin film transistor (TFT) array. The image contrast can be apparently improved under a series of X-ray pulses due to an outstanding long-term plasticity of the single pixel, which is beneficial to the subsequent image recognition and classification based on artificial neural network. The merits of large-scale production ability and good compatibility with modern microelectronic techniques belonging to amorphous oxide semiconductors may promote the development of neuro-inspired X-ray imagers and corresponding machine vision systems.

Description of Excitonic Absorption Using the Sommerfeld Enhancement Factor and Band-Fluctuations

Abstract One of the challenges of excitonic materials is the accurate determination of the exciton binding energy and bandgap from optical measurements. The difficulty arises from the overlap of the discrete and continuous excitonic absorption at the band edge. Many researches have modeled the shape of the absorption edge of such materials on the seminal formulation proposed by Elliott in 1957 and its several modifications such as non-parabolic bands, magnetic potentials and electron-hole-polaron interactions. However, exciton binding energies obtained from optical absorption often vary strongly depending on the chosen ``Elliott formula". Here, we propose an alternative and rather simple approach, which has previously been successful in the determination of the optical bandgap of amorphous, direct and indirect semiconductors, based on the band-fluctuations model. In this model, the fluctuations due to disorder, temperature or lattice vibrations give rise to the well known exponential shape of band tail states. The formulation results in an analytic equation for the fundamental absorption with 6 parameters only. To test it, the binding energy and optical bandgap of GaAs and the family of tri-halide perovskites (MAPbX3), X=Br,I,Cl, over a wide range of temperatures, are obtained by fitting the modified Elliott model. The results for the bandgap, linewidth and exciton binding energy are in good agreement with reports based on non-optical measurements. Moreover, due to the polar nature of perovskites, the retrieved binding energies can be compared with those computed with a model proposed by Kane et al. (1978). In the latter model, the exciton is surrounded by a cloud of virtual phonons interacting via the Frölich interaction. As a consequence, the upper bound for the binding energy of the exciton-polaron system can be estimated. These results are in good agreement with the optical parameters obtained with the proposed Elliott equation including band-fluctuations.

Unravelling the electrochemical impedance spectroscopy of hydrogenated amorphous silicon cells for photovoltaics

Abstract This research reveals the application of electrochemical impedance spectroscopy (EIS) in analyzing and improving the performance of hydrogenated amorphous silicon (a-Si: H) based photovoltaic cells. As a non-destructive technique, EIS provides deep insight into the electrochemical characteristics of photovoltaic cells, including series resistance, layer capacitance, recombination mechanisms, and charge transport. The impedance data is obtained and analyzed using small AC potential signals at various frequencies via Nyquist diagrams and Bode plots. This analysis allows the identification of resistive and capacitive elements as well as the evaluation of the quality of the interface between the active layer and the electrode. The results show that EIS can identify internal barriers that reduce the efficiency of a-Si: H solar cells, such as dominant recombination mechanisms and inefficient charge transport. Using equivalent circuit models, electrochemical parameters are extracted to reveal cell behavior and performance. In addition, these results also confirm that EIS is an important tool in design optimization and performance improvement of a-Si: H photovoltaic cells, providing a solid scientific basis for the development of more efficient and sustainable solar cell technology. These findings contribute to efforts to increase solar energy efficiency, supporting broader and more effective use of photovoltaic technology in meeting global sustainable energy needs.

Performance Study of Cadmium Telluride Solar Cell Featured with Silicon Thin Film Made by Sol-Gel Route

Performance Study of Cadmium Telluride Solar Cell Featured with Silicon Thin Film Made by Sol-Gel Route

Magnetic order in nanogranular iron germanium (Fe0.53Ge0.47) films

We study the effect of strain on the magnetic properties and magnetization configurations in nanogranular FexGe1-xfilms (x=0.53±0.05) with and without B20 FeGe nanocrystals surrounded by an amorphous structure. Relaxed films on amorphous silicon nitride membranes reveal a disordered skyrmion phase while films near and on top of a rigid substrate favor ferromagnetism and an anisotropic hybridization of Fedlevels and spin-polarized Gespband states. The weakly coupled topological states emerge at room temperature and become more abundant at cryogenic temperatures without showing indications of pinning at defects or confinement to individual grains. These results demonstrate the possibility to control magnetic exchange and topological magnetism by strain and inform magnetoelasticity-mediated voltage control of topological phases in amorphous quantum materials.

Simulation Study of High-Precision Characterization of MeV Electron Interactions for Advanced Nano-Imaging of Thick Biological Samples and Microchips

The resolution of a mega-electron-volt scanning transmission electron microscope (MeV-STEM) is primarily governed by the properties of the incident electron beam and angular broadening effects that occur within thick biological samples and microchips. A precise understanding and mitigation of these constraints require detailed knowledge of beam emittance, aberrations in the STEM column optics, and energy-dependent elastic and inelastic critical angles of the materials being examined. This simulation study proposes a standardized experimental framework for comprehensively assessing beam intensity, divergence, and size at the sample exit. This framework aims to characterize electron-sample interactions, reconcile discrepancies among analytical models, and validate Monte Carlo (MC) simulations for enhanced predictive accuracy. Our numerical findings demonstrate that precise measurements of these parameters, especially angular broadening, are not only feasible but also essential for optimizing imaging resolution in thick biological samples and microchips. By utilizing an electron source with minimal emittance and tailored beam characteristics, along with amorphous ice and silicon samples as biological proxies and microchip materials, this research seeks to optimize electron beam energy by focusing on parameters to improve the resolution in MeV-STEM/TEM. This optimization is particularly crucial for in situ imaging of thick biological samples and for examining microchip defects with nanometer resolutions. Our ultimate goal is to develop a comprehensive mapping of the minimum electron energy required to achieve a nanoscale resolution, taking into account variations in sample thickness, composition, and imaging mode.

Direct Ag-Hg amalgamation in the nanoscale on the surface of biosourced amorphous silica

Mercury poses a significant threat to air, soil, and water ecosystems. Mercury-based alloys, aka amalgams, are already known for their effectiveness in mercury capture in water and gaseous streams. However, limited research has been published on direct amalgamation, the process involving a direct redox reaction between two metals, occurring on the surface of amorphous silica. This study investigates the amalgamation process in nanoscale, in particular the direct interaction between silver (Ag⁰) nanoparticles supported on functionalized bio-derived amorphous silicon dioxide (SiO₂) and mercury (Hg2⁺) ions in aqueous solutions. Also, the influence of aqueous mercury speciation on amalgamation is studied in detail. The results reveal that the presence of chloride (Cl⁻), acetate (OAc⁻), and nitrate (NO3⁻) ions significantly influences the interaction between mercury and silver. We propose plausible mechanisms to explain these observations. Our findings demonstrate that the maximum mercury uptake capacity followed the order HgCl2 > Hg(OAc)2 > Hg(NO3)2, while the reaction rate followed the order Hg(OAc)2 > HgCl2 > Hg(NO3)2. These findings hold significant implications for the design of efficient mercury remediation processes. By elucidating the influence of aqueous speciation on amalgamation, our work paves the way for tailored strategies that can maximize mercury capture from water.

Amorphous silica production from Colombian rice husk: demonstration in scaled-up process Products

Introduction: the agroindustry generates significant waste, posing environmental, health, and economic challenges. Among these, rice husk, a byproduct of the food industry, stands out due to its potential as a source of silicon. Due to its silicon content, rice husk offers a unique opportunity for sustainable energy production and the extraction of high-value products, such as amorphous silicon dioxide (SiO2). However, optimizing processes for its efficient conversion remains a challenge.Objective: the aim of this study was to optimize the nitric acid concentration for the pretreatment of Colombian rice husk in order to produce high-purity amorphous SiO2 and demonstrate the feasibility of scaling up the process.Methods: a two-stage process was developed, which involved treating rice husk with nitric acid, followed by calcination at 620 °C. The nitric acid concentration was optimized to achieve the highest SiO2 purity. Material characterization was performed using thermogravimetric analysis (TGA), X-ray diffraction (XRD), X-ray fluorescence (XRF), and nitrogen adsorption-desorption. To assess the scalability of the process, the treatment was replicated on a larger scale using the optimized acid concentration.Results: the optimized process using a nitric acid concentration of 0.2 M yielded amorphous SiO2 with a purity of 94.9% and a surface area of 298 m²/g. When scaled up, the process achieved SiO2 with a purity of 95.5%, confirming the feasibility of the methodology for industrial applications. Conclusions: the treatment of rice husk with nitric acid followed by calcination proves to be an effective and scalable approach for producing high-purity amorphous SiO2. This process not only holds potential for industrial applications but also provides a sustainable solution for valorizing agroindustrial waste, contributing to the circular economy.

Using phosphorus doped hydrogenated silicon oxycarbide film as a window layer on the light entrance side of silicon heterojunction solar cells: The role of phase separation on electron transport

The phosphorus doped hydrogenated nanocrystalline silicon oxycarbide (n-nc-SiCO:H) layer can be used as a window layer on the light incident side of silicon heterojunction solar cells (HJT). The chemical composition, structural organization and properties of the n-nc-SiCO:H layer deposited from plasma enhanced chemical vapor deposition (PECVD) method can be easily manipulated via radio frequency power density tuned. Phase separation is observed in the n-nc-SiCO:H layer in which nanoscale silicon crystallites were embedded in amorphous silicon oxycarbide matrix. The optical properties of the n-nc-SiCO:H layer are depended on oxygen and carbon atoms incorporation ratio. The conductivity of the n-nc-SiCO:H layer is dominated by activated phosphorus concentration and the phase separation. The activated phosphorus atoms which play an important role on electron transportation are distributed in both crystalline silicon phase and amorphous silicon phase. Both activated phosphorus concentration and band gap value for oxygen rich amorphous silicon oxycarbide layer are determined by incorporation ratio of O atoms. The interplay effects of optical and electrical properties of the n-nc-SiCO:H layers on HJT cells electric performance variation are revealed out in this report. An average efficiency (across ∼120 cells) of 26.3 % was achieved in cells with optimized power density for the n-nc-SiCO:H layer. The results demonstrate that phase separation in the n-nc-SiCO:H layer plays a critical role on electron transportation.

Amino acid assisted-construction of 2D-hierarchical MFI zeolites for adsorption of rhodamine B

Hierarchical and two-dimensional (2D) zeolites have drawn much attention in catalysis and separation process due to their fast mass transfer. However, the facile manipulation in controllable mesopore volumes and morphologies for hierarchical nanozeolites is full of challenges. Herein, a facile strategy is presented for the synthesis of single-crystalline 2D hierarchical MFI zeolite nanosheets (HNSs) with tunable mesopore volumes through the amino acid-assisted crystallization of nucleated amorphous silicon precursors (NASPs). The tailored synthesis of HNSs with controllable aspect ratios ((Lc + La)/Lb), b-axis thicknesses (a few tens of nanometers) and mesopore volumes is achieved by adjusting the preparation of the NASPs and the amount of amino acid in the synthesis mixture. The HNSs exhibit large BET surface area (>400 m2 g-1), high micropore volume (0.16–0.18 cm3 g−1) as well as rich mesopore volume (>0.10 cm3 g−1), indicating the high crystallinity of the hierarchical zeolite nanosheets. Specially, the higher adsorption capability and faster adsorption rate for the dye (Rhodamine B) adsorption demonstrate the excellent performance of the hierarchical zeolite nanosheets, which exhibits the maximum adsorption capacity of 115.7 mg g−1. The controllable manipulation of mesoporous volumes and morphologies in MFI zeolites represents a significant contribution to the field of zeolite microstructure engineering.

Study on the Mechanism of Bubble Defects in the PECVD Amorphous Silicon Films on Dielectric Substrate

The amorphous silicon (a-Si) grown by plasma enhanced chemical vapor deposition (PECVD) has been widely applied in advanced semiconductor devices. However, it still suffers from the bubble defects when the deposition temperature goes above 450 °C. In this work, we have investigated the influence of underlying materials on the formation of bubbles of a-Si. The a-Si was deposited on different dielectric substrates, including silicon nitrides (SiN) and silicon dioxide (SiO2), using PECVD technique at a substrate temperature of 500 °C. A large number of bubbles of the a-Si has been observed on the thermal ALD deposited SiN underlayer, and some of them even burst. In contrast, no bubble defects were observed at the a-Si grown on PECVD SiN and PECVD SiO2 films. Such deviation may be attributed to the quality of the underlying material, which induces the H/H2 diffusion during the growth of a-Si and results in bubbles. A solution based on the model has been used to suppress the formation of such bubbles. An inserting layer of SiO2 was introduced in between SiN and a-Si to improve the density of the lower layer material and the adhesion between the two materials. As a result, there is no bubble defects at the surface of a-Si observed using optical microscope. Our work reveals the mechanism of the formation of bubble defects and paves a new method to eliminate the bubbles defects and to form high-quality a-Si, which shows potential in the manufacture of semiconductor devices.

On the characteristics of helium filled nano-pores in amorphous silicon thin films

On the characteristics of helium filled nano-pores in amorphous silicon thin films

Temperature dependent radiative and non-radiative recombination lifetimes of luminescent amorphous silicon oxynitride systems

In our previous work, we deeply researched the absolute photoluminescence (PL) quantum yields of luminescent modulating a-SiNxOy films with various N/Si atom ratios under different measurement temperatures. In this work, we further systematically studied the temperature dependent kinetic processes of radiative and non-radiative recombinations in a-SiNxOy systems in the visible light range. First, we investigated the structure of a-SiNxOy films and obtained the concentrations of both trivalent Si and N-Si-O defects related dangling bonds through XPS, FTIR and EPR measurements. Then we further tested the transient fluorescence attenuation of a-SiNxOy films detected at different emission wavelengths. We found that the PL lifetimes of a-SiNxOy films vary with the change of N-Si-O defect state concentrations, which is different from the typical PL decay characteristics of band tail related a-SiNx films previously reported. By combining the resulting PL IQE values with the ns-PL lifetimes, we further intensively redetermined the radiative and non-radiative recombination lifetimes of a-SiNxOy systems. The related radiative recombination rates were obtained (kr∼108 s−1), which can be compared to the results in the direct band gap.

Lanthanide‐Like Contraction Enables the Fabrication of High‐Purity Selenium Films for Efficient Indoor Photovoltaics

AbstractThe lanthanide contraction involves a reduction in atomic radius among f‐block elements below the expected level. A similar contraction is observed in group‐16 elements. The atomic radius of Se (117 pm) is slightly larger than that of S (104 pm) arising from the presence of d electrons, compared to the significant increase in atomic radius from O (73 pm) to S. This lanthanide‐like contraction contributes to Se's robust oxidative resistance. Here we report a selective oxidation strategy utilizing Se's strong antioxidative property to remove coexisting narrow‐band gap Te impurities from Se feedstocks. This strategy selectively oxidizes volatile Te impurities into involatile TeO2 that remains in the evaporation source, while only volatile Se deposits onto the substrate during the thermal‐evaporation deposition process. This enables the fabrication of high‐purity Se films possessing a wide band gap of 1.88 eV, ideally suited to the optimal band gap for indoor photovoltaics (IPVs). The resulting Se photovoltaics exhibit an efficiency of 20.1 % under 1000‐lux indoor illumination, outperforming market‐dominant amorphous silicon and all types of lead‐free perovskite IPVs. Unencapsulated Se devices show no efficiency degradation after 20,000 hours of storage in ambient atmosphere.

Flexible and Extensible Ribbon-Cable Interconnects for Implantable Electrical Neural Interfaces.

The design and characterization of thin-film ribbon cables as electrical interconnects for implanted neural stimulation and recording devices are reported. Our goal is to develop flexible and extensible ribbon cables that integrate with thin-film, cortical penetrating microelectrode arrays (MEAs). Amorphous silicon carbide (a-SiC) and polyimide were employed as the structural elements of the ribbon cables and multilayer titanium/gold thin films as electrical traces. Using photolithography and thin-film processing, ribbon cables with linear and serpentine electrical traces were investigated. A cable design with an open lattice geometry was also investigated as a means of achieving high levels of extensibility while preserving the electrical function of the cables. Multichannel ribbon cables were fabricated with 50 mm lengths and metallization trace widths of 2-12 μm. The ribbon cables tolerate flexural bending to a radius of 50 μm with no change in trace impedance but tolerate less than 5% tensile elongation without trace failure. Ribbon cables with a lattice structure exhibit 300% elongation without failure. The high elongation tolerance is attributed to a lattice design that results in an out-of-plane displacement that avoids fracture or plastic deformation. Extensible ribbon cables underwent up to 50,000 tensile elongation cycles to 45% extension without failure. An electrical interconnect process using through-holes in the distal gold bond pads of the ribbon cables was used to connect to an a-SiC-based MEA. The electrical connection was created by stenciling a conductive epoxy into the through-holes, bridging metallization between the traces, and MEA. The interconnect was tested using a ribbon cable connected to an a-SiC MEA implanted acutely in rat cortex and used to record neuronal activity. These highly flexible and extensible ribbon cables are expected to accommodate large extensions and facilitate cable routing during surgical implantation. They may also reduce tethering forces on implanted electrode arrays, potentially improving chronic neural recording performance.

Lanthanide-Like Contraction Enables the Fabrication of High-Purity Selenium Films for Efficient Indoor Photovoltaics.

The lanthanide contraction involves a reduction in atomic radius among f-block elements below the expected level. A similar contraction is observed in group-16 elements. The atomic radius of Se (117 pm) is slightly larger than that of S (104 pm) arising from the presence of d electrons, compared to the significant increase in atomic radius from O (73 pm) to S. This lanthanide-like contraction contributes to Se's robust oxidative resistance. Here we report a selective oxidation strategy utilizing Se's strong antioxidative property to remove coexisting narrow-band gap Te impurities from Se feedstocks. This strategy selectively oxidizes volatile Te impurities into involatile TeO2 that remains in the evaporation source, while only volatile Se deposits onto the substrate during the thermal-evaporation deposition process. This enables the fabrication of high-purity Se films possessing a wide band gap of 1.88 eV, ideally suited to the optimal band gap for indoor photovoltaics (IPVs). The resulting Se photovoltaics exhibit an efficiency of 20.1 % under 1000-lux indoor illumination, outperforming market-dominant amorphous silicon and all types of lead-free perovskite IPVs. Unencapsulated Se devices show no efficiency degradation after 20,000 hours of storage in ambient atmosphere.

The advantages of employing i-a-SiOX:H as a buffer layer in hydrogenated amorphous silicon oxide solar cells

Abstract This study focuses on a p-i-n single junction solar cell made of hydrogenated amorphous silicon oxide (a-SiOx:H), aiming to enhance solar cell efficiency by mitigating the impact of discontinuities and mismatches occurring at the i/p defect-rich interface between the window layer and the absorber layer. To address this concern, the impact of adding a thin i-a-SiOx:H buffer layer between the p-a-SiOx:H window layer and the i-a-SiOx:H active layer was investigated through numerical modeling using the AMPS-1D (Analysis of Micro-electronic and Photonic Structures) computer program. Implementing these changes led to a remarkable increase in conversion efficiency, rising from 5.714% to an impressive 8.929%. The increase in short-circuit current (JSC), however, is due to improved quantum efficiency at short wavelengths between 350 and 550 nm. Furthermore, enhancing the built-in potential (Vbi) at the i/p interface, combined with the buffer layer’s appropriate band gap energy, increases VOC (open-circuit voltage) from 850 to 993 mV. The substantial improvement in the fill factor (FF) from 63.1 to 83.1% can be largely attributed to the smoothed band offset, primarily facilitated by the presence of the buffer layer at the p/i interface, which led to more efficient extraction of photogenerated holes. To ensure effective usage of the buffer layer, the thickness of a-SiOx:H (buffer layer) varied between 3 nm and 9 nm, while the p-type doping concentration of the same layer was adjusted between 0 and 1020 cm−3. In summary, adding a 3 nm thick a-SiOx:H buffer layer with an intermediate band gap and with a p-type doping concentration (NA) below 1018 cm−3 at the i/p interface improves the electrical and optical properties of the p-i-n solar cells (EFF = 8.951%; VOC = 0.994 V; FF = 83.1%; JSC = 10.842 mA.cm−2).