Aluminum-doped Silicon Carbide Research Articles

Investigation of magnetism in aluminum-doped silicon carbide nanotubes

The effect of aluminum doping on the structural, electronic and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) is investigated using spin-polarized density functional theory. It is found from the calculation of the formation energies that aluminum substitution for silicon atom is preferred. Our results show that the magnetization depends on the substitutional site, aluminum substitution at silicon site does not introduce any spin-polarization, whereas the aluminum substitution for carbon atom yields a spin polarized, almost dispersionless π band within the original band gap.

Flexible Hydrophobic and Lipophilic Aluminum‐Doped Silicon Carbide Fibrous Mats Synthesized by Electrospinning Polyaluminocarbosilane

Flexible aluminum‐doped silicon carbide (SiC(Al)) fibrous mats were synthesized by combining electrospinning and polymer‐derived ceramic techniques. The mats consist of three‐dimensional network structure with randomly distributed fibers of approximately 1.5 μm diameter. The obtained mats exhibited simultaneous fairly good hydrophobic and lipophilic behavior without the need of any posttreatment. Given the intrinsic oxidation/corrosion resistance of Al‐doped SiC, the ceramic mats obtained here could be very promising for applications in harsh environments.

AC susceptibility study of superconducting aluminum-doped silicon carbide

In 2007, type-I superconductivity in heavily boron-doped silicon carbide was discovered. The question arose, if it is possible to achieve a superconducting phase by introducing dopants different from boron. Recently, aluminum-doped silicon carbide was successfully found to superconduct by means of resistivity and DC magnetization measurements [1]. In contrast to boron-doped silicon carbide, the aluminum doped system is treated as a type-II superconductor because of the absence of an hysteresis in data measured upon decreasing and increasing temperature in finite magnetic fields. In this paper, results of a recent AC susceptibility study on aluminum-doped silicon carbide are presented. In higher applied DC magnetic fields and at low temperatures, a weak indication of supercooling with a width of a few mK is found. This supports the conclusion that aluminum-doped silicon carbide is located near to the border between type-I and type-II superconductivity, as pointed out in a recent theoretical work, too.