Silicone elastomer (SE) has several advantages as an insulator material, light weight, dielectric, water repellent (hydrophobic), resistivity, thermal, mechanical and earthquake resistant properties compared to porcelain/ceramic and glass. However, the installation of outdoor insulators with tropical climate temperature exposure above 15 °C, high humidity and uv intensity during the day can degrade its properties which will shorten the life of the insulator. Studies towards improvements to improve the performance of SE insulators under certain conditions can be carried out by using the vulcanization method, formulating the stoichiometry of the filler material. The high-dose filler in SE will increase its mechanical strength and thermal stability, but it can reduce its dielectric properties and the molding process more difficult. Therefore, the purpose of this study was to determine the stoichiometric composition of SiO2 nanofillers and alumina trihydrate (ATH) nanofiller on SE to improve their properties as outdoor high-voltage insulators. Making test-material from silicone rubber resin RTV683 with a mixture of silica powder (20 nm) and ATH powder (20–30 nm). The stoichiometric ratio of resin, filler and hardener compositions varied (80–95: 5–20: 3–7.5). To determine its performance, the specimens were aged by immersing them in 25–50 °C water, artificially polluting and uv radiation the surface to simulate the influence of water diffusion and transfer hydrophobicity to pollution on the surface material. Measurement results before and after treatment indicated that the combination of SiO2 + ATH nanofiller with a composition of 10–15%wt improved the properties of ES such as hydrophobic (average contact angle of water drops > 90°), water absorption < 1.6%, relative permittivity εr < 5, mechanical properties (tensile strength) is 9.57–27.48 N/mm2, surface roughness 0.022–0.153 μm, breakdown voltage 14.8–19.3 kV/cm varies depending on stoichiometric nanofiller, mixing process, curing temperature (50 °C–90 °C) and curing time 2–24 h.
Read full abstract