We have studied PL and EL properties of chemically stable perovskite phosphor films. Pr-doped Ca0.6Sr0.4TiO3 perovskite films were grown epitaxially on SrTiO3 (001) substrates and their intense red luminescence were observed. The PL intensity was markedly increased by post-annealing treatments, and the maximum PL intensity was obtained by the combination of relatively low-temperature film growth at 600 °C and sequential rapid post-annealing at 1000 °C. 1 We have discovered perovskite thin film electroluminescence, opening a new optical application of regarding perovskite materials. Complete epitaxial growth of all of the layers and very flat interfaces with monoatomic steps have been obtained. With increasing driving voltage, the intensity of electroluminescence dramatically increases. The sharp electroluminescence peak at around 610 nm at 12 V becomes much stronger with increasing ac voltage. High-quality red color is produced and the working voltage for whole-surface electroluminescence is as low as 10 V. 2 The electron beam irradiation was a method of obtaining electrical and optically emitting. In this report, we show preparation of cathodoluminescence in perovskite films for RGB colors. The films were grown on double-side polished SrTiO3 (001) substrates by pulsed laser deposition. The single-phase polycrystalline targets were prepared by a conventional solid-state reaction method. Compositions of green, blue and red were [(Ca0 . 97Mg0 . 03)0 . 98Tb0 . 02]SnO3, Sr2(Sn0.95Ti0.05)O4 and Pr0.002(Ca0.6Sr0.4)0.997TiO3, respectively. During film growth, the SrTiO3 substrates were heated to 600 °C for film and the oxygen partial pressure was controlled at 50 Pa. An ArF excimer laser (λ = 193 nm) was used that had a repetition rate of 8 Hz and a fluence of around 1.2 J cm−2 pulse−1 at the target surface. In order to take out luminescence excited by the electron beam from the side opposite to with a film adhesion side, the both-side polished substrate which has about 70% (at 500nm) of transparent was used. The field emitter with a gate electrode was used for the source of electrons. The transmittance of film with both-side polished substrate after 1000°C post-annealing treatments was 67 % (at 500nm), indicating that the transmittance of the epitaxially grown alkaline-earth stannates film is very high. When the phosphor film of [(Ca0 . 97Mg0 . 03)0 . 98Tb0 . 02]SnO3was irradiated with the electron beam, the cathode luminescence peaks were observed at around 490, 543, 582, 620 nm. These results clearly show that CL has been successfully obtained in the perovskite films. By using thin film phosphor for FED, high resolution could be realized and it is efficient and also possibility of a long-life. REFERENCES (1) H. Takashima, et al, Applied Physics Letters. 89 261915 (2006). (2) H. Takashima, et al, Advanced Materials . 21 3699 (2009)