Alignment Of Zinc Oxide Nanorods Research Articles

Aluminum-doped zinc oxide thin film as seeds layer effects on the alignment of zinc oxide nanorods synthesized in the chemical bath deposition

Aluminum-doped zinc oxide thin films with different thicknesses were deposited using a radio frequency sputtering system. As thickness increased, crystallinity improved and resistivity decreased. The optical transmittance of the films was over 80%. Well-aligned zinc oxide nanorods were synthesized on aluminum doped zinc oxide thin films in the chemical bath deposition. It was found that the morphological, structural, and optical properties of zinc oxide nanorods were significantly influenced by thicknesses of aluminum-doped zinc oxide films. Zinc oxide nanorods exhibited better crystallinity as film thickness increased. High transmittance of over 65% was obtained from zinc oxide nanorods. Vertical alignment of zinc oxide nanorods was dependent on growth direction of aluminum-doped zinc oxide films.

Optical and photoluminescence properties of Ga doped ZnO nanostructures by sol-gel method

Zinc oxide (ZnO) nanocrystallites with different Ga-doping levels were successfully prepared by spin coating sol–gel technique. The morphological properties of Ga doped ZnO films were studied by atomic force microscopy (AFM). Alignment of ZnO nanorods with respect to the substrate depends on the amount of Ga dopant content. The dopant content varies from 1 % to 4 %, based on Ga-doping levels. The optical properties of the ZnO nanocrystallites following Ga-doping were also investigated by UV–Visible absorption and Photoluminescence spectra. Our results indicate that Ga-doping can change the energy-band structure and effectively adjust the intensity of the luminescence properties of ZnO nanocrystallites. Transmittance spectra of the films indicate that the films have high transparency. The refractive index dispersion was analyzed by single oscillator model developed by Wemple and DiDomenico. The oscillator energy, dispersion energy, high frequency dielectric constant values for the films were determined were calculated and it is found that the optical parameters are changed with Ga-doping content.

습식공정 기반 ITO 기판 위 산화아연 나노로드 모폴로지 제어

We report growth of vertically well-aligned zinc oxide (ZnO) nanorods on indium-tin oxide (ITO)/glass substrates using a simple aqueous solution method at low temperature via control of the ZnO seed layer morphology. ZnO nanoparticles acting as seeds are pre-coated on ITO-coated glass substrates. by spin coating to control distribution and density of the ZnO seed nanoparticles. ZnO nanorods were synthesized on the seed-coated substrates in a dipping process into a main growth solution. It was found that the alignment of ZnO nanorods can be effectively manipulated by the spin-coating speed of the seed layer. A grazing incidence X-ray diffraction pattern shows that the ZnO seed layer prepared using the higher spin-coating speed is of uniform seed distribution and a flat surface, resulting in the vertical growth of ZnO nanorods aligned toward the [0001] direction in the main growth process.