Cu-based chalcogenide p-type semiconductors in the form of nanocrystals can be used to deposit low-temperature and stable hole-transport layers (HTL) for n-i-p perovskite solar cells (PSCs). In this study, the synthesis parameters are modified to improve the hole-extraction of CuIn0.75Ga0.25S2 (CIGS) layer. By optimizing the amount of oleylamine as the capping agent, the internal series resistance of PSCs decreases significantly while preventing aggregation of CIGS nanocrystals. Increasing the growth temperature from 220°C to 275°C leads to an increase in the size of CIGS nanocrystals. This results in an improvement in the open-circuit voltage of PSCs with FTO/c-TiO2/m-TiO2/Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3/CIGS/Au structure from 0.941 to1.092 V, and Fill Factor from 60 to 73 on average. Finally, a nanocomposite of CIGS and a small amount of doped Spiro-OMeTAD is applied in PSCs with ITO/SnO2/(FA,MA)Pb(I,Cl,Br)3/HTL/Au structure. The achieved efficiency of 18.72% is comparable to that of PSCs with highly doped Spiro OMeTAD (18.5%).