Advanced Electronic Materials Research Articles

End-to-End Bent Perylene Bisimide Cyclophanes by Double Sulfur Extrusion.

Bending inherently planar π-cores consisting of only six-membered rings has traditionally been challenging because a powerful transformation is required to compensate for the significant strain energy associated with bending. Herein, we demonstrate that sulfur extrusion can achieve substantial molecular bending of a perylene structure to form a substructure of a Vögtle belt, a proposed yet hitherto elusive carbon nanotube fragment. Bent perylene bisimide (PBI) derivatives were synthesized through a double-sulfur-extrusion reaction from the corresponding sulfur-containing V-shaped precursors with an internal alkyl tether. The effect of bending the inherently planar PBI core, which is a recent topic of interest for the design of advanced organic electronic and optoelectronic materials, was investigated systematically. Increasing the curvature leads to a red shift in the absorption and emission spectra, while the fluorescence quantum yields remain high. This stands in contrast with the nonemissive features of previously reported nonplanar PBI derivatives based on conjugative tethers. Detailed photophysical measurements indicated that the increasing curvature with shorter alkyl tethers (i) slightly facilitates intersystem crossing and (ii) significantly suppresses the internal conversion in the excited state of the present bent PBI derivatives. The latter characteristics originate from the restricted dynamic motion associated with the charge-transfer (CT) character between the core chromophores and the N-aryl units.

Evolution of Musculoskeletal Electronics.

The musculoskeletal system, constituting the largest human physiological system, plays a critical role in providing structural support to the body, facilitating intricate movements, and safeguarding internal organs. By virtue of advancements in revolutionized materials and devices, particularly in the realms of motion capture, health monitoring, and postoperative rehabilitation, "musculoskeletal electronics" has actually emerged as an infancy area, but has not yet been explicitly proposed. In this review, the concept of musculoskeletal electronics is elucidated, and the evolution history, representative progress, and key strategies of the involved materials and state-of-the-art devices are summarized. Therefore, the fundamentals of musculoskeletal electronics and key functionality categories are introduced. Subsequently, recent advances in musculoskeletal electronics are presented from the perspectives of "in vitro" to "in vivo" signal detection, interactive modulation, and therapeutic interventions for healing and recovery. Additionally, nine strategy avenues for the development of advanced musculoskeletal electronic materials and devices are proposed. Finally, concise summaries and perspectives are proposed to highlight the directions that deserve focused attention in this booming field.

Preface

Preface Third International Conference on Physics of Materials & Nanotechnology (ICPN-2023) On behalf of Organizing committee, it’s my great pleasure to bring this beautiful collection of research articles which were presented in the Third International Conference on Physics of Materials and Nanotechnology (ICPN-2023) which was organized by Department of Physics, Mangalore University, Mangalagangothri, Mangalore (Karnataka), India during September 21st to 23rd, 2023. This conference will serve as an ideal platform for young researchers, academician and students from all over the country as well as from the globe to share their ideas and experiences in Physics, Nanotechnology and Nano science research. This conference provided meaningful platform for young researchers to update and upgrade themselves. The main themes of the conferences Advanced Energy and Solar Materials, 1-D, 2-D and Quantum dot Materials, Advanced Electronic Materials, Polymers, Conducting Polymer and Thin films, Solid State Materials and their properties, Sensors and actuators, Carbon related materials, Metal Oxide & Sulphide Materials, Ferroelectrics and dielectric materials, Soft, Magnetic and smart materials, Nano Material, Nanotechnology, Chemistry of Materials, Alloys, Semiconductor and optical Materials and Crystal growth & applications etc. I am glad that experts in the various field of Nanotechnology are here to present and discussed their ideas and latest development in the field. ICPN 2023 has received a great response throughout the country and globe. It includes 14 invited talks, 11 oral presentations and more than 120 poster presentations. We have received more than 130 papers for the publications in this issue, after reviewing and editing processes, 47 papers were accepted for the publication out of 74 submitted papers. We thank the authors for their contribution and the reviewers for their comments to improve the quality of article. I would like to express my gratitude to all members of organizing committee, staff, research scholars and postgraduate students of the institute for their willingness, commitment, dedication and relentless efforts in ensuring that conference was successful.List of Editorial Board is available in this pdf.

Unlocking Innovations: Celebrating the First Year of Open Access in Advanced Electronic Materials

Unlocking Innovations: Celebrating the First Year of Open Access in Advanced Electronic Materials

Polymeric electronic materials for microelectronics manufacturing: A review

This review paper is part of a series of papers dedicated to the centenary celebration of the American Chemical Society Division of Polymeric Materials: Science and Engineering which has been the scientific home of many polymer scientists and engineers in the semiconductor industry. It is a review of parts of the research and development of advanced polymeric electronic materials for the fabrication and manufacturing of modern integrated circuits at the International Business Machines Corporation. This paper covers three types of advanced polymeric electronic materials: (1) photoresist materials used to “print” integrated circuits on silicon wafers, (2) on-chip low dielectric constant (low-κ) materials to insulate electrically conducting copper wires and (3) photo-patternable on-chip low-κ materials which function both as a photoresist and as an on-chip low-κ material. The photoresist materials are thin film imaging material systems of bilayer photoresist materials for 248 nm lithography and trilayer photoresist materials for 193 nm lithography. The low-κ dielectric material part focuses on fundamental understanding of plasma-induced damage to nanoporous organosilicate low-κ dielectric materials and the design of damage-resistant low-κ dielectric materials. Finally, the photo-patternable low-κ dielectric materials part describes the design and the development of dual-functional photo-patternable low-κ dielectric materials for both 193 nm and 248 nm lithography patterning of semiconductor Back-End-Of-the-Line. Several of these materials have been adopted for high-volume manufacturing of semiconductor chips for some of the most popular electronic devices in the world today.

MXene-Layered Double Hydroxide Reinforced Epoxy Nanocomposite with Enhanced Electromagnetic Wave Absorption, Thermal Conductivity, and Flame Retardancy in Electronic Packaging.

Due to the increased integration and miniaturization of electronic devices, traditional electronic packaging materials, such as epoxy resin (EP), cannot solve electromagnetic interference (EMI) in electronic devices. Thus, the development of multifunctional electronic packaging materials with superior electromagnetic wave absorption (EMA), high heat dissipation, and flame retardancy is critical for current demand. This study employs an in-situ growth method to load layered double hydroxides (LDH) onto transition metal carbides (MXene), synthesizing a novel composite material (MXene@LDH). MXene@LDH possesses a sandwich structure and exhibits excellent EMA performance, thermal conductivity, and flame retardancy. By adjusting the load of LDH, under the synergistic effect of multiple factors, such as dielectric and polarization losses, this work achieves an EMA material with a remarkable minimum reflection loss (RL) of -52.064dB and a maximum effective absorption bandwidth (EAB) of 4.5GHz. Furthermore, MXene@LDH emerges a bridging effect in EP, namely MXene@LDH/EP, leading to a 118.75% increase in thermal conductivity compared to EP. Simultaneously, MXene@LDH/EP contributes to the enhanced flame retardancy compared to EP, resulting in a 46.5% reduction in the total heat release (THR). In summary, this work provides a promising candidate advanced electronic packaging material for high-power density electronic packaging.

Constructing Hierarchical Polymer Nanocomposites with Strongly Enhanced Thermal Conductivity.

The rapid advancement of communication technology has substantially increased the demand for advanced electronic packaging materials with high thermal conductivity and outstanding electrical insulation properties. In this study, we design polyvinyl alcohol/polydopamine-modified boron nitride nanosheet (PVA/BNNS@PDA) nanocomposites with hierarchical structures by combining electrospinning, vacuum filtration deposition, and hot pressing. The modified BNNS@PDA improves the interaction between the filler and the polymer matrix while reducing the interfacial thermal resistance, resulting in superior thermal conductivity, excellent insulation, and perfect flexibility. The PVA/BNNS@PDA nanocomposites possess an ultrahigh in-plane thermal conductivity of 16.6 W/(m·K) at 35.54 wt % BNNS@PDA content. Even after 2000 folds, the nanocomposites do not undergo any crack, showing their ultrahigh thermal conductivity behavior. Furthermore, the nanocomposites exhibit a volume resistivity above 1014 Ω·cm, which is well above the standard for insulating materials. Based on these results, this work provides a novel method to produce nanocomposites with high thermal conductivity, offering a new perspective to design advanced thermal management materials.

Silicon Phthalocyanines as Emerging n-Type Semiconductors in Thin Film Transistors

Silicon phthalocyanines are emerging n-type semiconductors for use in organic photovoltaics (OPVs) and organic thin-film transistors (OTFTs).[1] Their low synthetic complexity paired with their versatile axial group facilitates the finetuning of their chemical properties, solution properties and processing characteristics without significantly affecting their frontier orbital levels or their absorption properties. The crystal engineering and film forming characteristics of silicon phthalocyanine semiconductors can be tuned through appropriate axial group functionalization, therefore facilitating their integration into OTFTs by solution processing or vapor deposition.We were the first to integrate SiPcs into OTFTs, and unlike the majority of phthalocyanines, SiPcs are inherently better electron transporting materials then hole transport materials. We demonstrated n-type mobilities on the order of 0.5 cm2/Vs which is among the best of all phthalocyanines.[3] Through axial functionalization we reported that changes in the electron withdrawing character of the axial group lead to predictable drops in device threshold voltage from 45 V to 5 V.[4] The axial group can also be used to improve the SiPc solubility leading to solution processable OTFTs where the choice of axial group also dictates the thin film morphology an ultimately the resulting device performance.[5] GIWAXS studies show that processing conditions and choice of axial groups leads to changes in molecular alignment at the interface providing critical insight into device optimization.This presentation will cover our recent advances in the development of structure property relationships between SiPc structure, thin film processing and resulting charge transport properties.REFERENCES1. ACS Applied Materials & Interfaces. 2021, 13, 31321-313302. Organic Electronics. 2020, 87, 1059763. Advanced Electronic Materials. 2019, 5, 19000874. ACS Appl. Electron. Mater. 2021, 3, 5, 2212–22235. ACS Applied Materials & Interfaces. 2020, 13, 1008-1020 Figure 1

Intercalation and Functionalization in 2D Materials

The large surface areas and interlayer gaps of 2D materials enable surface functionalization and intercalation as effective post-synthesis design knobs to tune the properties of 2D materials using ions, atoms, and organic molecules. For complete engineering control, detailed understanding of the interactions between the 2D materials and the molecules adsorbed on 2D materials surface or between the 2D materials and the intercalants is necessary.I will first discuss surface functionalization to tune the electrical properties of 2D materials. We developed an experimental approach to quantitatively measure the doping powers of organic electron donors (OEDs) to monolayer MoS2. Using novel and previously studied OEDs, we demonstrate experimentally that the measured doping power is a sensitive function of molecule’s reduction potential, size, surface coverage, and orientation to 2D materials [1, 2].I will then discuss electrochemical intercalation into 2D materials to induce novel phases that were previously undetected and to study heterointerface effects on the intercalation induced phase transition [3, 4]. We discover new structural phases in Td-WTe2 and T’-MoTe2 with lithium intercalation and these new phases are semiconducting even though the initial WTe2 and MoTe2 are semimetallic and lithium ions donate electrons to the host materials. In the lithium intercalation-induced phase transition from the 2H to 1T’ phase of MoS2, we show that the nucleation of the 1T’ phase proceeds via heterogeneous nucleation where the nature of heterointerface dictates the thermodynamics of the phase transition. For these studies, multi-modal, in-situ probes were necessary to track the changes in the structure-property relation of the layered materials as a function of intercalation.[1] Advanced Electronic Materials 7, 2000873 (2021).[2] Nano Letters 22, p.4501 (2022).[3] ACS Applied Materials & Interfaces 13, p.10603-10611 (2021).[4] Advanced Materials 34, 2200861 (2022).

Utilizing Dip-Coating to Fabricate Gate Dielectric and Semiconductor for Thin-Film Transistors

The potential applications of advanced electronic materials in large-area, printable, and flexible electronics have generated significant interest. However, creating high-performance, low-voltage thin-film transistors (TFTs) for these applications remains difficult due to a lack of advanced gate dielectric and semiconductor materials that meet both ease-of-fabrication requirements and high electrical performance. In this study, we present high-performance gate dielectric thin-films, which were fabricated using a facile solution-based technique, and then employed to realize low operating voltage organic and metal oxide semiconductor-based thin-film transistors. The high-k oxide gate dielectrics were produced via a simple dip-coating method, resulting in the formation of thin-oxide layers. These novel oxide gate dielectrics demonstrated exceptional dielectric properties, with large capacitances (up to 430 nF/ cm2), low-level leakage current densities (< 3 × 10-8A/cm2 at 4 V), featureless morphology (rms roughness < 0.36 nm), and high transparency (> 85%). Consequently, these dip-coated gate dielectrics can be incorporated into thin-film transistors, utilizing pentacene as p-type organic semiconductors. Furthermore, by employing dip-coating, indium oxide and indium-gallium-zinc oxide can be utilized as n-type inorganic semiconductors, allowing for the fabrication of low-voltage operation and high-performance inorganic TFTs. The resulting TFTs functioned at ultralow voltages (< ± 2 V) and achieved high transistor performance (hole mobility: 0.28 cm2V-1·s-1, electron mobility: ~2.0 cm2V-1·s-1 and on/off current ratio >105).

Spin order on the pyrochlore lattice: Magnetic crystallography, Landau thermodynamics and emergent phenomena

Pyrochlore sublattice is an integral structural component of numerous families of electronic and magnetic materials, including pyrochlores, spinels, and Laves phases C15, which exhibit plethora of magnetic behavior and multiple functionalities. The geometrical frustration inherent in the pyrochlore lattice leads to the formation of a broad diversity of unconventional magnetic states with unique physical properties. This article focuses on the symmetry-based concept of the Landau order parameter (OP) for uniform description of the most common types of long-range ordered magnetic structures (aristotypes) and related multi-ordered states derived from the pyrochlore lattice. Based on the combination of group-theoretical and crystallographic approaches the symmetry hierarchy of the magnetic structures and the corresponding OPs are established. The symmetry analysis reveals the role of the secondary OPs in the magnetic structure formation and emergent phenomena such as spin-driven ferroelasticity, ferroelectricity and orbital ordering. Within the framework of Landau thermodynamics, possible phase diagrams including multicritical points are determined. This study shows the significant potential of applying OP concept in a wide range of tasks, from the construction of microscopic theories to the search for new advanced magnetic and electronic materials.

Low dielectric silsesquioxane-modified benzocyclobutene composites

Benzocyclobutene (BCB) resin has been widely used as an advanced electronic packaging material due to its excellent low-dielectric (low-k) properties, good thermal stability, and high planarization. However, it is still urgent to further reduce its dielectric constant for high-frequency applications. Herein, a series of organoalkoxysilane (D4Sin)-functionalized thermosetting benzocyclobutene (BCB) resins were reported. Precursors with the large hindrance of 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane (D4Vi) ring as the core, as well as tunable vinyl and methoxyl substituents as pendant groups, have been successfully prepared by the efficient platinum-catalyzed hydrosilylation reaction. They can further undergo the pre-polymerization via hydrolytic condensation of methoxyl groups and post-thermal curing processes via thermal-induced ring-opening and Diel-Alder reactions between vinyl groups and bis (benzocyclobutenyl) divinyltetramethylsiloxane (DVS-BCB), respectively. The fully cured materials exhibited excellent dielectric properties with a dielectric constant (Dk) of 2.20 and a dissipation factor (Df) of 7.04 × 10−4, good thermal stability (the 5% weight loss temperature, Td5 ˃ 445 °C), strong hydrophobicity (water contact angle >100°) and good mechanical properties. Compared with traditional thermosetting BCB resins, this procedure combined BCB resins with silsesquioxanes including the ladder/cage-like or network topological structures. This work provided a simple and universal method to construct intrinsically porous materials of organoalkoxysilane-functionalized BCB resins, laying the foundation for the future fabrication of ultra-low dielectric electronic packaging materials with nanoscale pores.

Enhanced electromagnetic wave absorption, thermal conductivity and flame retardancy of BCN@LDH/EP for advanced electronic packing materials

The limited functionalization of current electronic packaging materials has restricted their use in advanced smart electronic devices with high energy density and low signal delay. In this study, we propose a novel strategy for developing an electronic packaging material (BCN@LDH/EP) that possesses exceptional electromagnetic wave (EMW) absorption, thermal management, and flame-retardant capabilities. BCN@LDH/EP is the double-level hollow core–shell structure (BCN@LDH) composed of a bowl-shaped carbon nanoshell (BCN) and a layered double hydroxide (NiAl-LDH). This structure offers rich heterogeneous interfaces and high specific surface area, thereby generating abundant polarization sites and favorable impedance matching. Consequently, the epoxy resin (EP) shows outstanding EMW absorption performance, with a maximum effective absorption band (EAB) of 6.43 GHz and a minimum reflection loss (RL) value of −55.75 dB at a filling amount of only 10 wt%. Moreover, the closely packed thermally conductive filler BCN@LDH provides a broad pathway for heat transfer within the EP, resulting in a significant thermal conductivity improvement efficiency (η) of ∼170%. Notably, the high-temperature cooling and barrier effects of BCN@LDH also confer excellent flame retardancy to the EP composite, reducing the total heat release (THR) rate by up to 44.9%.

2023: Year of Re‐Debut

2023: Year of Re‐Debut

Part One - Advanced electronic materials for clean energy applications

Part One - Advanced electronic materials for clean energy applications

Part Two - Advanced electronic materials for energy storage (supercapacitor and battery) applications

Part Two - Advanced electronic materials for energy storage (supercapacitor and battery) applications

Enhanced thermal conductivity of epoxy composites reinforced with oriented polydopamine-graphene foam complexed by metal ions

Although graphene has aroused considerable interest in the thermal conductive enhancement of polymer composites for its superb intrinsic thermal conductivity, the enhancement efficiency is still limited by its production-induced defects, misalignment and intense phonon interface scattering. Herein, the three-dimensional (3D) polydopamine-graphene foam (PGF) with high orientation and good interfacial bonding has been prepared by electro-exfoliation, surface modification and unidirectional-freezing. This unique structure imparts excellent thermal conductivity, electrical insulation and good mechanical property to the PGF/epoxy (PGF/EP) composite. The highly arranged and compact stacked PDA-graphene sheets bound by metal ions provide heat conduction paths for effective phonon transport within the matrix. The manufactured PGF/EP shows enhanced through-plane thermal conductivity of 3.48 W/m·K with 3.02 vol% of PGF, excellent surface & volume electrical resistivity (2.7 × 1011 Ω and 1.65 × 1011 Ω·cm) and high mechanical strength (82.74 MPa), as well as the outstanding heat dissipation performance. Therefore, the PGF/EP composites prepared in the present study have a broad application prospect in advanced electronic packaging materials.

Plasma-Chemical Synthesis and Properties of Oxide Compounds of Cobalt

To date, the possibilities of using metal oxide particles in various fields have been developed [1]. At the same time, their characteristics largely depend on the method of preparation, which usually determines their structure, size, and physicochemical properties [2].Among the methods for obtaining nanosized particles, one can single out methods of green synthesis [3], electrochemical [4], electropulse [5], and plasmachemical [6] synthesis based on the reduction or oxidation of metal ions in solutions under favorable conditions, followed by aggregation of nanoparticles.The purpose of this work is to analyze the technology for the synthesis of cobalt oxide compounds using contact nonequilibrium low-temperature plasma and to determine the directions for its further improvement.The object of the study was the process of obtaining particles of cobalt oxide using contact non-equilibrium low-pressure plasma during the processing of a liquid medium.The study was carried out using laboratory equipment and software modules of the HSC Chemistry 5.11 package. To find the preliminary conditions for the formation of interphase boundaries, diagrams were used in the coordinates of the E-pH potential of the aquatic environment (Pourbaix diagrams). It has been established that, depending on the initial state of Co(OH)2 in solution, the mass fraction of oxygen in the precipitate can change. In this case, the addition of hydrogen peroxide leads to a decrease in the proportion of hydroxide compounds in sediments. X-ray phase analysis showed the presence of CoO, CoOOH, Co3O4, β-Co(OH)2, Co in dry sediments. It has been established that the particle sizes lie in the range of 10 – 110 nm. The micrographs confirm the agreement between the calculated values and the experimental data.The phase composition of the deposit is influenced by the following factors: current density and anion concentration, process temperature. Increasing the temperature increases the diffusion coefficient but requires a higher current density to produce a powder. It has been established that a decrease in the liquid layer contributes to an increase in the yield of oxide compounds. The results of the analysis allow us to conclude that when using the technologies of plasma-chemical processing of liquid media to obtain compounds of the ultra- and nanoscale range, it becomes necessary to choose the parameters that are optimal for this process. The results of the analysis allow us to conclude that this technology can be optimized by controlling the initial pH of the solution; use of the spent solution in a container with the initial solution for its acidification; refinement of the reactor block for treating the solution in a film mode or close to it; choice of rational parameters for sludge drying. Laurent S., Boutry S., Muller R. N. Metal oxide particles and their prospects for applications //Iron oxide nanoparticles for biomedical applications. – Elsevier, 2018. –P. 3-42.Wang L. et al. Rational design, synthesis, adsorption principles and applications of metal oxide adsorbents: a review //Nanoscale. – 2020. – Vol. 12. – №. 8. – P. 4790-4815.El Shafey A. M. Green synthesis of metal and metal oxide nanoparticles from plant leaf extracts and their applications: A review //Green Processing and Synthesis. – 2020. – Vol. 9. – №. 1. – P. 304-339.Lawrence M. J., Kolodziej A., Rodriguez P. Controllable synthesis of nanostructured metal oxide and oxyhydroxide materials via electrochemical methods //Current Opinion in Electrochemistry. – 2018. – Vol. 10. – P. 7-15.Gan Z. et al. A laser and electric pulse modulated nonvolatile photoelectric response in nanoscale copper dusted metal‐oxide‐semiconductor structures //Advanced Electronic Materials. – 2018. – Vol. 4. – №. 11. – P. 1800234.Shamanin I. et al. Plasmachemical synthesis and evaluation of the thermal conductivity of metal-oxide compounds for prospective nuclear fuel //Journal of Physics: Conference Series. – IOP Publishing, 2019. – Vol. 1145. – №. 1. – P. 012057.

(Invited, Digital Presentation) Oxide TFTs Based on Semiconductors and Semimetals

Oxide semiconductors have opened a new era for large-area, flexible and transparent applications. Despite the progresses, a bottleneck issue of oxide thin-film transistors (TFTs) is the instability either under bias stress or when used as a current source. Furthermore, the carrier mobility and current driving capability need to be improved for high-spec displays. It is still hugely challenging to overcome both issues using the conventional device structure and oxide semiconductor materials.Here, we review our recent work on novel oxide TFTs that show a few desirable properties. Rather than using an ohmic metal contact as the source electrode, a high work-function Schottky source contact enables depletion around the TFT source region, which results in intrinsic immunity to the negative bias illumination stress, no obvious short channel effect, and superb current saturation over a wide range of drain voltage1. The flat saturation current gives rise to an extremely high voltage gain reaching 23,000, which is, to the best of our knowledge, the highest gain ever achieved by a solid-state transistor to date. The threshold voltage is also found to remain stable under different drain voltages, in contrast to standard TFTs, which may be useful in larger-area displays where the drain voltages of the drive TFTs can differ2. Furthermore, the depletion provided by the Schottky source electrode allows utilizing semi-metal ITO to replace IGZO as the TFT channel layer, which significantly enhances the carrier mobility and current driving capability. Other related work may also be discussed in the talk including oxide Schottky diodes operating beyond 10 GHz3, oxide TFTs operating beyond 1 GHz4, significantly enhanced carrier mobility by self-assembled monolayer treatment5,6, and CMOS-like oxide-based logic circuits7,8. References Extremely high-gain source-gated transistors, J Zhang, J Wilson, G Auton, Y Wang, M Xu, Q Xin, A Song, Proceedings of the National Academy of Sciences 116 (11), 4843-4848 (2019)Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors, Zhenze Wang, Li Luo, Yiming Wang, Jiawei Zhang, and Aimin Song, IEEE Transactions on Electron Devices, 69(2), 561 - 566 (2022).Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz, J Zhang, Y Li, B Zhang, H Wang, Q Xin, A Song, Nature communications 6 (1), 1-7 (2015).Amorphous-InGaZnO thin-film transistors operating beyond 1 GHz achieved by optimizing the channel and gate dimensions, Y Wang, J Yang, H Wang, J Zhang, H Li, G Zhu, Y Shi, Y Li, Q Wang, Qian Xin, Zhongchao Fan, Fuhua Yang, Aimin Song, IEEE Transactions on Electron Devices 65 (4), 1377-1382 (2018).Significant Performance Improvement of Oxide Thin‐Film Transistors by a Self‐Assembled Monolayer Treatment, W Cai, J Zhang, J Wilson, J Brownless, S Park, L Majewski, A Song, Advanced Electronic Materials 6 (5), 1901421 (2020).Significant performance enhancement of very thin InGaZnO thin-film transistors by a self-assembled monolayer treatment, W Cai, J Wilson, J Zhang, J Brownless, X Zhang, LA Majewski, A Song, ACS Applied Electronic Materials 2 (1), 301-308 (2020).Complementary integrated circuits based on p-type SnO and n-type IGZO thin-film transistors, Y Li, J Yang, Y Wang, P Ma, Y Yuan, J Zhang, Z Lin, L Zhou, Q Xin, Aimin Song, IEEE Electron Device Letters 39 (2), 208-211 (2017).Thin Film Sequential Circuits: Flip-Flops and a Counter Based on p-SnO and n-InGaZnO, Y Yuan, J Yang, Y Wang, Z Hu, L Zhou, Q Xin, A Song, IEEE Electron Device Letters 42 (1), 62-65 (2020).

The Dynamic Properties at Elevated Temperature of the Thermoplastic Polystyrene Matrix Modified with Nano-Alumina Powder and Thermoplastic Elastomer.

The performance improvement of advanced electronic packaging material is an important topic to meet the stringent demands of modern semiconductor devices. This paper studies the incorporation of nano-alumina powder and thermoplastic elastomer (TPE) into thermoplastic polystyrene matrix to tune the thermal and mechanical properties after injection molding process. In the sample preparation, acetone was employed as a solvent to avoid the powder escape into surrounding during the mechanical mixing in a twin-screw mixer. The pressure and shear force were able to mix the composite with good uniformity in compositions. The samples with different compositions were fabricated using injection molding. The measured results showed that adding 5 wt.% of TPE into the simple polystyrene was able to raise the melt flow index from 12.3 to 13.4 g/10 min while the thermal decomposition temperature remained nearly unchanged. Moreover, the addition of small amount of nano-alumina powder could quickly improve the mechanical property by raising its storage modulus. For example, the addition of 3 wt.% of nano-alumina powder had an increase of 7.3% in storage modulus. Over doping of nano-alumina powder in the composite, such as 10 wt.%, on the other hand, lowered the storage modulus from 2404 MPa to 2069 MPa. The experimental study demonstrated that the tuning in the polystyrene’s thermal and mechanical properties is feasible by composition modification with nano-alumina powder and TPE. The better concentration of the additives should be determined according to the specific applications.