Layered materials, such as MoS2, are of great interest to the research community due to their wide range of potential applications. They are of particular interest as supports for low dimensional metal catalysts, as well as for use in the electronics industry as ultra-thin diffusion barriers in semi-conductor device interconnects.Thus, understanding the interaction between a variety of metal structures and the MoS2 monolayer is of great importance. In previous studies the focus has been largely on the strength of the interaction between a single atom or a nanoparticle of a wide variety of metals, which creates a significant knowledge gap in thin film nucleation on 2D materials. To begin addressing this deficit, we present a density functional theory (DFT) study of the adsorption of small metal structures, with up to four atoms, on a monolayer of MoS2. The metals of interest are Cu, Co and Ru, chosen for their relevance in electronics applications. We show how the metal-substrate interaction changes depending on the particular metal, as well as the mode of adsorption and overall nanocluster structure. Further, we show the effect that the presence of a sulphur vacancy in the monolayer has on the metal-substrate interaction, as this is a commonly observed defect.The strength of interaction between the metals and MoS2 is in the order Co > Ru > Cu. The effect of adsorption on MoS2 is localised to the metal cluster, however depending on the particular structure, some distortions of the MoS2 lattice can be observed upon adsorption of Ru.