Active Matrix Flat-panel Imagers Research Articles

Improved temporal performance and optical quantum efficiency of avalanche amorphous selenium for low dose medical imaging.

Active matrix flat panel imagers (AMFPIs) with thin-film transistor arrays experience image quality degradation by electronic noise in low-dose radiography and fluoroscopy. One potential solution is to overcome electronic noise using avalanche gain in an amorphous selenium (a-Se) (HARP) photoconductor in indirect AMFPI. In this work, we aim to improve temporal performance of HARP using a novel composite hole blocking layer (HBL) structure and increase optical quantum efficiency (OQE) to CsI:Tl scintillators by tellurium (Te) doping. Two different HARP structures were fabricated: Composite HBL samples and Te-doped samples. Dark current and optical sensitivity measurements were performed on the composite HBL samples to evaluate avalanche gain and temporal performance. The OQE and temporal performance of the Te-doped samples were characterized by optical sensitivity measurements. A charge transport model was used to investigate the hole mobility and lifetime of the Te-doped samples in combination with time-of-flight measurements. The composite HBL has excellent temporal performance, with ghosting below 3% at 10mR equivalent exposure. Furthermore, the composite HBL samples have dark current and achieved an avalanche gain of 16. Te-doped samples increased OQE from 0.018 to 0.43 for 532nm light. The addition of Te resulted in 2.1% first-frame lag, attributed to hole trapping within the layer. The composite HBL and Te-doping can be utilized to improve upon the limitations of previously developed indirect HARP imagers, showing excellent temporal performance and increased OQE, respectively.

Minimization of image lag in polycrystalline mercuric iodide converters through incorporation of Frisch grid structures for digital breast tomosynthesis

Objective. Polycrystalline mercuric iodide photoconductive converters fabricated using particle-in-binder techniques (PIB HgI2) provide significantly more detected charge per x-ray interaction than from a-Se and CsI:Tl converters commonly used with active matrix flat-panel imagers (AMFPIs). This enhanced sensitivity makes PIB HgI2 an interesting candidate for applications involving low x-ray exposures—since the relatively high levels of additive electronic noise exhibited by AMFPIs incorporating a-Se and CsI:Tl reduce detective quantum efficiency (DQE) performance under such conditions. A theoretical study is reported on an approach for addressing a major challenge impeding practical use of PIB HgI2 converters—the high lag exhibited by the material (over 10%) which would lead to undesirable image artifacts in applications involving acquisition of consecutive images such as digital breast tomosynthesis. Approach. Charge transport modeling accounting for the trapping and release of holes (thought to be the primary contributor to lag) was used to examine signal properties, including lag, of pillar-supported Frisch grids embedded in the photoconductor for 100 μm pitch AMFPI pixels. Performance was examined as a function of electrode voltage, grid pitch (center-to-center distance between neighboring grid wires) and the ratio of grid wire width to grid pitch. Main results. Optimum grid designs maximizing suppression of signal generated by hole transport, without significantly affecting the total signal due to electron and hole transport, were identified and MTF was determined. For the most favorable designs, additional modeling was used to determine DQE. The results indicate that, through judicious choice of grid design and operational conditions, first frame lag can be significantly reduced to below 1%—less than the low levels exhibited by a-Se. DQE performance is shown to be largely maintained as exposure decreases—which should help to maintain good image quality. Significance. Substantial reduction of lag in PIB HgI2 converters via incorporation of Frisch grids has been demonstrated through modeling.

Theoretical investigation of the signal performance of HgI2 x-ray converters incorporating a Frisch grid structure at mammographic energies

Active matrix, flat-panel imagers (AMFPIs) suffer from decreased detective quantum efficiency under conditions of low dose per image frame (such as for digital breast tomosynthesis, fluoroscopy and cone-beam CT) due to low signal compared to the additive electronic noise. One way to address this challenge is to introduce a high-gain x-ray converter called particle-in-binder mercuric iodide (PIB HgI2) which exhibits 3–10 times higher x-ray sensitivity compared to that of a-Se and CsI:Tl converters employed in commercial AMFPI systems. However, a remaining challenge for practical implementation of PIB HgI2 is the high level of image lag, which is believed to largely originate from the trapping of holes. Towards addressing this challenge, this paper reports a theoretical investigation of the use of a Frisch grid structure embedded in the converter to suppress hole signal—which would be expected to reduce image lag. The grid acts as a third electrode sandwiched between a continuous top electrode and pixelated bottom electrodes having a 100 μm pitch. Signal properties of such a detector are investigated as a function of VDR (the ratio of the voltage difference between the electrodes in the region below the grid to that above the grid), grid pitch (the center-to-center distance between two neighboring grid wires) and R GRID (the ratio of grid wire width to grid pitch) for mammographic x-ray energies. The results show that smaller grid pitch suppresses hole signal to a higher degree (up to ∼96%) while a larger gap between grid wires and higher VDR provide minimally impeded electron transport. Examination of the tradeoff between maximizing electron signal and minimizing hole signal indicates that a grid design having a grid pitch of 20 μm with R GRID of 50% and 65% provides hole signal suppression of ∼93% and ∼95% for VDR of 1 and 3, respectively.

Empirical noise performance of prototype active pixel arrays employing polycrystalline silicon thin-film transistors.

In the spirit of overcoming the signal-to-noise limitations of active matrix, flat-panel imagers (AMFPIs) which employ array circuits based on a-Si:H thin-film transistors (TFTs), an empirical investigation of the noise properties of prototype active pixel arrays based on polycrystalline silicon (poly-Si) TFTs is reported. Like a-Si:H, poly-Si supports fabrication of large area, monolithic x-ray imaging arrays and offers good radiation damage resistance, while providing electron and hole mobility orders of magnitude higher. Compared to pixel circuits typically consisting of a single addressing switch in an AMFPI array, the pixel circuit of an active pixel array includes an amplifier that magnifies the imaging signal prior to readout by external acquisition electronics. Also, while readout erases signal stored in the pixels for AMFPI arrays, active pixel arrays allow multiple nondestructive readout, which can be used to reduce noise. The prototype arrays investigated in this paper were developed to explore the effect of variation in amplifier design on noise. A pair of prototype arrays incorporating single-stage and two-stage poly-Si pixel amplifiers were examined. The arrays incorporate various amplifier designs in which dimensions of some of the three (or four) poly-Si TFTs per pixel circuit for the single-stage array, and some of the five poly-Si TFTs for the two-stage array, were varied. The arrays were operated using a recently developed electronic data acquisition system that allows variation of operational conditions such as voltages and timing of control signals. The arrays were operated in the absence of radiation in various correlated multiple sampling modes, with and without the injection of charge directly into the pixel circuits for measurements of in-pixel gain and pixel noise. Pixel noise, referred back to the input of the pixel amplifier, was compared to predictions generated by a sophisticated circuit simulation model. Across the various pixel circuit designs, the median in-pixel gain for the single-stage and two-stage arrays was measured to be ×9.3 and ×25, respectively. These gain levels were sufficient to reduce the contribution of external noise, defined as the electronic additive noise in the absence of noise contributions from circuitry in the pixel and referred back to the input of the pixel amplifier, to less than 340 e. As a result, median pixel noise results as low as ~695 e and 866 e, acquired using eight samples, were observed from the best-performing single-stage and two-stage designs, respectively. While the magnitude of pixel noise predicted by simulation was lower than the measured results, there was generally good agreement between simulation and measurement for the functional dependence of noise on operating voltages, timing, and sampling mode. The single-stage and two-stage arrays examined in this study demonstrated pixel noise well below that typically demonstrated by AMFPIs. Through proper design, it should be possible to maintain the noise levels observed in this study irrespective of the size and pitch of an active pixel array. Further reduction in pixel noise may be possible through more optimized pixel circuit design, faster readout, or improvements in fabrication.

Evaluation of a hybrid direct-indirect active matrix flat-panel imager using Monte Carlo simulation.

Purpose: Monte Carlo simulations were used to evaluate the imaging properties of a composite direct-indirect active matrix flat-panel imager (AMFPI) with potentially more favorable tradeoffs between x-ray quantum efficiency and spatial resolution than direct or indirect AMFPIs alone. This configuration, referred to as a hybrid AMFPI, comprises a scintillator that is optically coupled to an a-Se direct AMFPI through a transparent electrode and hole blocking layer, such that a-Se acts as both a direct x-ray converter and an optical sensor. Approach: GEANT4 was used to simulate x-ray energy deposition, optical transport, and charge signal generation processes in various hybrid AMPFI configurations under RQA5 and RQA9 x-ray beam conditions. The Fujita-Lubberts-Swank method was used to quantify the impact of irradiation geometry, x-ray converter thicknesses, conversion gain of each layer, and x-ray cross talk between layers on detective quantum efficiency (DQE). Results: Each hybrid configuration had a greater DQE than its direct AMFPI layer alone. The DQE improvement was largest at low spatial frequencies in both front- and back-irradiation (BI) geometries due to increased x-ray quantum efficiency provided by the scintillator. DQE improvements persisted at higher frequencies in BI geometry due to preferential x-ray absorption in a-Se. Matching the x-ray-to-charge conversion gains of a hybrid AMFPI's direct and indirect detection layers affects its Swank factor and, thus, DQE(0). X-ray cross talk has a negligible impact on the of hybrid AMFPIs with sufficiently high optical quantum efficiency. Conclusion: An optimized hybrid AMFPI can achieve greater DQE performance than current direct or indirect AMFPIs.

Count rate capabilities of polycrystalline silicon photon counting detectors for CBCT applications—a theoretical study

The signal-to-noise properties of active matrix, flat-panel imagers (AMFPIs) limit the imaging performance of this x-ray imaging technology under conditions of low dose per image frame. This limitation can affect cone-beam computed tomography (CBCT) procedures where an AMFPI is used to acquire hundreds of image frames to form a single volumetric data set. An approach for overcoming this limitation is to replace the energy-integrating pixel circuits of AMFPI arrays with photon counting pixel circuits which examine the energy of each x-ray interaction and count those events whose signals exceed user-defined energy thresholds. A promising material for fabricating the circuits of such photon-counting detectors (PCDs) is polycrystalline silicon (poly-Si)—a semiconductor that facilitates economic manufacture of large area, monolithic arrays of the size presently provided by AMFPIs as well as provides good radiation damage resistance. In this paper, results are reported from a theoretical investigation of the potential for poly-Si PCDs to satisfy the count rate needs, while maintaining good energy resolution, of two CBCT applications—CBCT used for breast imaging and kilo-voltage CBCT used for providing localization information in image guided radiotherapy (referred to as BCT and kV-CBCT, respectively). The study focused on the performance of the critical first component of a PCD pixel circuit, the amplifier, under conditions relevant to the two applications. The study determined that, compared to the average input fluxes associated with BCT and kV-CBCT, a promising amplifier design employing poly-Si thin-film transistors can provide count rates two and four times in excess of those levels, respectively, assuming a dead time loss of 10%. In addition, calculational estimates based on foreseeable poly-Si circuit densities suggest that it should be possible to include sufficient circuitry to support 2 and 3 energy thresholds per pixel, respectively. Finally, prospects for further improvements are discussed.

Development of a novel high quantum efficiency MV x-ray detector for image-guided radiotherapy: A feasibility study.

PurposeTo develop a new scintillating fiber‐based electronic portal imaging device (EPID) with a high quantum efficiency (QE) while preserving an adequate spatial resolution.MethodsTwo prototypes were built: one with a single pixel readout and the other with an active matrix flat‐panel imager (AMFPI) for readout. The energy conversion layer of both prototypes was made of scintillating fiber layers interleaved with corrugated lead sheets to form a honeycomb pattern. The scintillating fibers have a diameter of 1 mm and the distance between the centers of neighboring fibers on the same layer is 1.35 mm. The layers have 1.22 mm spacing between them. The energy conversion layer has a thickness of 2 cm. The modulation transfer function (MTF), antiscatter properties and sensitivity of the detector with a single pixel readout were measured using a 6‐MV beam on a LINAC machine. In addition, a Monte Carlo simulation was conducted to calculate the zero‐frequency detective quantum efficiency (DQE(0)) of the proposed detector with an active matrix flat‐panel imager for readout.ResultsThe DQE(0) of the proposed detector can be 11.5%, which is about an order of magnitude higher than that of current EPIDs. The frequency of 50% modulation (f50) of the measured MTF is 0.2 mm-1 at 6 MV, which is comparable to that of video‐based EPIDs. The scatter to primary ratio (SPR) measured with the detector at 10 cm air gap and 20 × 20 cm2 field size is approximately 30% lower than that of ionization chamber–based detectors with a comparable QE. The detector noise which includes the x‐ray quantum noise and absorption noise is much larger than the electronic noise per pixel of the flat‐panel imager at a dose of less than two LINAC pulses. Thus, the proposed detector is quantum noise limited down to very low doses (∼a couple of radiation pulses of the LINAC). A proof‐of‐concept image has been obtained using a 6‐MV beam.ConclusionsThis work indicates that by using scintillating fibers and lead layers it is possible to increase the thickness of the detecting materials, and therefore the QE or the DQE(0) of the detector, while maintaining an adequate spatial resolution for MV x‐ray imaging. Due to the use of lead as the spacing material, the new detector also has antiscatter property, which will help improve the signal‐to‐noise ratio of the images. Further investigation to optimize the design of the detector and achieve a better combination of DQE and spatial resolution is warranted.

Back-irradiated and dual-screen sandwich detector configurations for radiography.

Recent advances in thin film transistor array technology have enabled the possibility of "back-irradiated" (BI) indirect active-matrix flat-panel imagers (AMFPIs), in which x-rays first expose the scintillator through the optical sensor, and "dual-screen" AMFPIs, in which two scintillating screens are sandwiched around a bidirectional active matrix. We developed a theoretical treatment of such detectors. The theory is used to investigate possible imaging performance improvements over conventional "front-irradiation" (FI) AMFPIs, where the active matrix is opposite the x-ray entrance surface. Simple expressions for the modulation transfer function, normalized noise power spectrum, Swank factor ( ), Lubberts function , and spatial frequency-dependent detective quantum efficiency are derived and used to compute these quantities for a variety of FI, BI, and dual-screen detector configurations. is used as the figure of merit for optimizing and comparing the performance of the various configurations. Large performance improvements over FI single-screen systems are found possible with BI. Further improvements are found possible with dual-screen configurations. The ratio of the thicknesses of the two screens that optimizes DQE is generally asymmetric, with the thinner screen facing the incident flux. The optimum ratio depends on the x-ray attenuation length in the screen.

Theoretical investigation of the count rate capabilities of in-pixel amplifiers for photon counting arrays based on polycrystalline silicon TFTs.

Photon counting arrays (PCAs), capable of measuring the spectral information of individual x-ray photons and recording that information digitally, provide a number of advantages compared to conventional, energy-integrating active matrix flat-panel imagers - such as reducing the undesirable effects of electronic readout noise and Swank noise. While contemporary PCAs are based on crystalline silicon, our group has been examining the use of polycrystalline silicon (poly-Si, a semiconductor material better-suited for the manufacture of large-area devices) for such arrays. In this study, a theoretical investigation of the front-end amplifiers of array pixels incorporating photon counting circuits is described - building upon circuit simulation techniques developed in a previous study. Results for amplifier circuit designs corresponding to prototype PCAs currently under development, as well as for hypothetical circuit designs identified in the study, are reported. In the simulations, performance metrics (such as signal gain, linearity of signal response, and energy resolution) as well as various measures of count rate are determined. The simulations employed various input energy distributions (i.e., a 72kVp spectrum as well as monoenergetic x rays) in order to determine circuit performance. To make the results representative of the properties of poly-Si, the simulations incorporated transistor characteristics that were empirically obtained from test devices. Optimal operating conditions for the circuits were determined by applying criteria to the performance metrics and identifying which conditions minimized settling time. Once the optimal operating conditions were identified, trains of input pulses simulating x-ray flux were used to determine two measures of count rate corresponding to dead time losses of 10% and 30% (referred to as CR10 and CR30 , respectively). The best-performing prototype amplifier design (implemented at a pixel pitch of 1mm) exhibited CR10 and CR30 values (expressed in counts per second per pixel) of 8.4 and 21.6kcps/pixel, respectively. A hypothetical amplifier design was derived by modifying transistor, resistor, and capacitor elements of the prototype amplifier designs. This hypothetical design (implemented at a pitch of 1mm) exhibited CR10 and CR30 values of 154 and 381kcps/pixel, respectively. When implemented at a pitch of 0.25mm, the performance of that design increased to 210 and 491kcps/pixel, respectively (corresponding to counts per second per unit area of 3.4 and 7.9Mcps/mm2 ). The simulation methodology described in this paper represents a useful tool for identifying promising designs for the amplifier component of photon counting arrays, as well as evaluating the analog signal and noise performance of those designs. The results obtained from the current study support the hypothesis that large-area, photon counting arrays based on poly-Si transistors can provide clinically useful count rates. Encouraged by these early results, further development of the methodology to assist in the identification and evaluation of even more promising designs, along with development and empirical characterization of prototype designs, is planned.

The Practice of Chest Radiography Using Different Digital Imaging Systems: Dose and Image Quality

Introduction: The study was undertaken to evaluate the practice of chest radiography using different digital imaging systems and its influence on dose and image quality. Materials and Methods: The study was carried out in two hospitals from March 2016 to June 2016. Sixty ambulatory patients aged 21 to 60 years who were able to cooperate without difficulty and weighed between 60 to 80 kg were selected randomly. The active matrix flat panel imagers technology was employed in the direct radiography (DR) system for Hospital A, whilst Hospital B used the single read out computed radiography (CR) system. The dose area product (DAP) meter was utilized in measuring the entrance surface air kerma. The chest radiographs were evaluated by two radiologists. Results: The mean entrance surface doses (ESDs) for posteroanterior chest in Hospital A (0.098 mGy) was lower than that obtained in Hospital B (0.161 mGy). However, the ESDs at both centres were lower than the recommended value by the International Atomic Energy Agency (IAEA; 0.3 mGy). The quality of the images for chest radiography in both hospitals was adequate to make a diagnosis with ESDs and effective doses lower than those recommended by IAEA and United Nations Scientific Committee on the Effects of Atomic Radiation (UNSCEAR). Conclusion: The study serves to highlight the practice of chest radiography with two different systems and its influence on image quality and dose. It can be concluded that there were significant differences in image quality and radiation dose for chest radiography practice using CR and DR.

Toward Scintillator High-Gain Avalanche Rushing Photoconductor Active Matrix Flat Panel Imager (SHARP-AMFPI): Initial fabrication and characterization.

We present the first prototype Scintillator High-Gain Avalanche Rushing Photoconductor Active Matrix Flat Panel Imager (SHARP-AMFPI). This detector includes a layer of avalanche amorphous Selenium (a-Se) (HARP) as the photoconductor in an indirect detector to amplify the signal and reduce the effects of electronic noise to obtain quantum noise-limited images for low-dose applications. It is the first time avalanche a-Se has been used in a solid-state imaging device and poses as a possible solution to eliminate the effects of electronic noise, which is crucial for low-dose imaging performance of AMFPI. We successfully deposited a solid-state HARP structure onto a 24 × 30 cm2 array of thin-film transistors (TFT array) with a pixel pitch of 85 μm. The HARP layer consists of 16 μm of a-Se with a hole-blocking and electron-blocking layer to prevent charge injection from the high-voltage bias and pixel electrodes, respectively. An electric field (ESe ) up to 105 V μm-1 was applied across the a-Se layer without breakdown. A 150 μm thick-structured CsI:Tl scintillator was used to form SHARP-AMFPI. The x-ray imaging performance is characterized using a 30 kVp Mo/Mo beam. We evaluate the spatial resolution, noise power, and detective quantum efficiency at zero frequency of the system with and without avalanche gain. The results are analyzed using cascaded linear system model (CLSM). An avalanche gain of 76 ± 5 was measured at ESe = 105 V μm-1 . We demonstrate that avalanche gain can amplify the signal to overcome electronic noise. As avalanche gain is increased, image quality improves for a constant (0.76 mR) exposure until electronic noise is overcome. Our system is currently limited by poor optical transparency of our high-voltage electrode and long integrating time which results in dark current noise. These two effects cause high-spatial frequency noise to dominate imaging performance. We demonstrate the feasibility of a solid-state HARP x-ray imager and have fabricated the largest active area HARP sensor to date. Procedures to reduce secondary quantum and dark noise are outlined. Future work will improve optical coupling and charge transport which will allow for frequency DQE and temporal metrics to be obtained.

Technical Note: Combination of multiple EPID imager layers improves image quality and tracking performance of low contrast‐to‐noise objects

We hypothesized that combining multiple amorphous silicon flat panel layers increases photon detection efficiency in an electronic portal imaging device (EPID), improving image quality and tracking accuracy of low-contrast targets during radiotherapy. The prototype imager evaluated in this study contained four individually programmable layers each with a copper converter layer, Gd2 O2 S scintillator, and active-matrix flat panel imager (AMFPI). The imager was placed on a Varian TrueBeam linac and a Las Vegas phantom programmed with sinusoidal motion (peak-to-peak amplitude = 20 mm, period = 3.5 s) was imaged at a frame rate of 10 Hz with one to four layers activated. Number of visible circles and CNR of least visible circle (depth = 0.5 mm, diameter = 7 mm) was computed to assess the image quality of single and multiple layers. A previously validated tracking algorithm was employed for auto-tracking. Tracking error was defined as the difference between the programmed and tracked positions of the circle. Pearson correlation coefficient (R) of CNR and tracking errors was computed. Motion-induced blurring significantly reduced circle visibility. During four cycles of phantom motion, the number of visible circles varied from 11-23, 13-24, 15-25, and 16-26 for one-, two-, three-, and four-layer imagers, respectively. Compared with using only a single layer, combining two, three, and four layers increased the median CNR by factors of 1.19, 1.42, and 1.71, respectively and reduced the average tracking error from 3.32 mm to 1.67 mm to 1.47 mm, and 0.74 mm, respectively. Significant correlations (P~10-9 ) were found between the tracking error and CNR. Combination of four conventional EPID layers significantly improves the EPID image quality and tracking accuracy for a poorly visible object which is moving with a frequency and amplitude similar to respiratory motion.

Theoretical investigation of the noise performance of active pixel imaging arrays based on polycrystalline silicon thin film transistors.

Active matrix flat-panel imagers, which typically incorporate a pixelated array with one a-Si:H thin-film transistor (TFT) per pixel, have become ubiquitous by virtue of many advantages, including large monolithic construction, radiation tolerance, and high DQE. However, at low exposures such as those encountered in fluoroscopy, digital breast tomosynthesis and breast computed tomography, DQE is degraded due to the modest average signal generated per interacting x-ray relative to electronic additive noise levels of ~1000e, or greater. A promising strategy for overcoming this limitation is to introduce an amplifier into each pixel, referred to as the active pixel (AP) concept. Such circuits provide in-pixel amplification prior to readout as well as facilitate correlated multiple sampling, enhancing signal-to-noise and restoring DQE at low exposures. In this study, a methodology for theoretically investigating the signal and noise performance of imaging array designs is introduced and applied to the case of AP circuits based on low-temperature polycrystalline silicon (poly-Si), a semiconductor suited to manufacture of large area, radiation tolerant arrays. Computer simulations employing an analog circuit simulator and performed in the temporal domain were used to investigate signal characteristics and major sources of electronic additive noise for various pixel amplifier designs. The noise sources include photodiode shot noise and resistor thermal noise, as well as TFT thermal and flicker noise. TFT signal behavior and flicker noise were parameterized from fits to measurements performed on individual poly-Si test TFTs. The performance of three single-stage and three two-stage pixel amplifier designs were investigated under conditions relevant to fluoroscopy. The study assumes a 20×20cm2 , 150μm pitch array operated at 30fps and coupled to a CsI:Tl x-ray converter. Noise simulations were performed as a function of operating conditions, including sampling mode, of the designs. The total electronic additive noise included noise contributions from each circuit component. The total noise results were found to exhibit a strong dependence on circuit design and operating conditions, with TFT flicker noise generally found to be the dominant noise contributor. For the single-stage designs, significantly increasing the size of the source-follower TFT substantially reduced flicker noise - with the lowest total noise found to be ~574e [rms]. For the two-stage designs, in addition to tuning TFT sizes and introducing a low-pass filter, replacing a p-type TFT with a resistor (under the assumption in the study that resistors make no flicker noise contribution) resulted in significant noise reduction - with the lowest total noise found to be ~336e [rms]. A methodology based on circuit simulations which facilitates comprehensive explorations of signal and noise characteristics has been developed and applied to the case of poly-Si AP arrays. The encouraging results suggest that the electronic additive noise of such devices can be substantially reduced through judicious circuit design, signal amplification, and multiple sampling. This methodology could be extended to explore the noise performance of arrays employing other pixel circuitry such as that for photon counting as well as other semiconductor materials such as a-Si:H and a-IGZO.

MO‐AB‐BRA‐07: Low Dose Imaging with Avalanche Amorphous Selenium Flat Panel Imager

Purpose:We present the first active matrix flat panel imager (AMFPI) capable of producing x‐ray quantum noise limited images at low doses by overcoming the electronic noise through signal amplification by photoconductive avalanche gain (gav). The indirect detector fabricated uses an optical sensing layer of amorphous selenium (a‐Se) known as High‐Gain Avalanche Rushing Photoconductor (HARP). The detector design is called Scintillator HARP (SHARP)‐AMFPI. This is the first image sensor to utilize solid‐state HARP technology.Methods:The detector's electronic readout is a 24 × 30 cm2 array of thin film transistors (TFT) with a pixel pitch of 85 µm. The HARP structure consists of a 15 µm layer of a‐Se isolated from the high voltage (HV) and signal electrode by a 2 µm thick hole blocking layer and electron blocking layer, respectively, to reduce dark current. A 150 µm thick structured CsI scintillator with reflective backing and a fiber optic faceplate (FOP) was coupled to the semi‐transparent HV bias electrode of the HARP structure. Images were acquired using a 30 kVp Mo/Mo spectrum typically used in mammography.Results:Optical sensitivity measurements demonstrate that gav = 76 ± 5 can be achieved over the entire active area of the detector. At a constant dose to the detector of 6.67 µGy, image quality increases with gav until the effective electronic noise is negligible. Quantum noise limited images can be obtained with doses as low as 0.18 µGy.Conclusion:We demonstrate the feasibility of utilizing avalanche gain to overcome electronic noise. The indirect detector fabricated is the first solid‐state imaging sensor to use HARP, and the largest active area HARP sensor to date. Our future work is to improve charge transport within the HARP structure and utilize a transparent HV electrode.

WE‐DE‐BRA‐06: Evaluation of the Imaging Performance of a Novel Water‐Equivalent EPID

Purpose:To evaluate the megavoltage imaging performance of a novel, water‐equivalent electronic portal imaging device (EPID) developed for simultaneous imaging and dosimetry applications in radiotherapy.Methods:A novel EPID prototype based on active matrix flat panel imager technology has been developed by our group and previously reported to exhibit a water‐equivalent dose response. It was constructed by replacing all components above the photodiode detector in a standard clinical EPID (including the copper plate and phosphor screen) with a 15 × 15 cm2 array of plastic scintillator fibers. Individual fibers measured 0.5 × 0.5 × 30 mm3. Spatial resolution was evaluated experimentally relative to that of a standard EPID with the thin slit technique to measure the modulation transfer function (MTF) for 6 MV x‐ray beams. Monte Carlo (MC) EPID models were used to benchmark simulated MTFs against the measurements. The zero spatial frequency detective quantum efficiency (DQE(0)) was simulated for both EPID configurations and a preliminary optimization of the prototype was performed by evaluating DQE(0) as a function of fiber length up to 50 mm.Results:The MC‐simulated DQE(0) for the prototype EPID configuration was ∼7 times greater than that of the standard EPID. The prototype's DQE(0) also increased approximately linearly with fiber length, from ∼1% at 5 mm length to ∼11% at 50 mm length. The standard EPID MTF was greater than the prototype EPID's for all spatial frequencies, reflecting the trade off between x‐ray detection efficiency and spatial resolution with thick scintillators.Conclusion:This study offers promising evidence that a water‐equivalent EPID previously demonstrated for radiotherapy dosimetry may also be used for radiotherapy imaging applications. Future studies on optimising the detector design will be performed to develop a next‐generation prototype that offers improved megavoltage imaging performance, with the aim to at least match that of current clinical EPIDs.Funding for this project was provided by an Australian Research Council Linkage Project grant (2015) between The University of Sydney, South Western Sydney Local Health District and Perkin‐Elmer Pty Ltd.

WE‐DE‐BRA‐04: A Cost‐Effective Pixelated EPID Scintillator for Enhanced Contrast and DQE

Purpose:Beams‐eye‐view imaging applications such as real‐time soft‐tissue motion estimation and MV‐CBCT are hindered by the inherently low image contrast of electronic portal imaging devices (EPID) currently in clinical use. We investigate a cost effective scintillating glass that provides substantially increased detective quantum efficiency (DQE) and contrast to noise ratio (CNR).Methods:A pixelated scintillator prototype was built from LKH‐5 glass. The array is 12mm thick; 42.4×42.4cm2 wide and features 1.51mm pixel pitch with 20µm separation (glue+septa). The LKH‐5 array was mounted on the active matrix flat panel imager (AMPFI) of an AS‐1200 (Varian) with the GdO2S2:Tb removed. A second AS‐1200 was utilized as reference detector. The prototype EPID was characterized in terms of CNR, modulation transfer function (MTF) and DQE. Additionally, the visibility of various fiducial markers typically used in the clinic as well as a realistic 3D‐printed lung tumor model was assessed. All items were placed in a 12cm thick solid water phantom. CNR is estimated using a Las Vegas contrast phantom, presampled MTF is estimated using a slanted slit technique and the DQE is calculated from measured normalized noise power spectra (NPS) and the MTF.Results:DQE(0) for the LKH‐5 prototype increased by a factor of 8× to about 10%, compared to the AS‐1200 equipped with its standard GdO2S2:Tb scintillator. CNR increased by a factor of 5.3×. Due to the pixel size the MTF50 decreased by about 55% to 0.23lp/mm. The visibility of all fiducial markers as well as the tumor model were however markedly improved in comparison to an acquisition with the same parameters using the GdO2S2:Tb scintillator.Conclusion:LKH‐5 scintillating glasses allow the cost effective construction of thick pixelated scintillators for portal imaging which can yield a substantial increase in DQE and CNR. Soft tissue and fiducial marker visibility was found to be markedly improved.The project was supported in part by NIH grant R01CA188446‐01 and a grant from Varian Medical Systems.

A piecewise-focused high DQE detector for MV imaging.

Electronic portal imagers (EPIDs) with high detective quantum efficiencies (DQEs) are sought to facilitate the use of the megavoltage (MV) radiotherapy treatment beam for image guidance. Potential advantages include high quality (treatment) beam's eye view imaging, and improved cone-beam computed tomography (CBCT) generating images with more accurate electron density maps with immunity to metal artifacts. One approach to increasing detector sensitivity is to couple a thick pixelated scintillator array to an active matrix flat panel imager (AMFPI) incorporating amorphous silicon thin film electronics. Cadmium tungstate (CWO) has many desirable scintillation properties including good light output, a high index of refraction, high optical transparency, and reasonable cost. However, due to the 0 1 0 cleave plane inherent in its crystalline structure, the difficulty of cutting and polishing CWO has, in part, limited its study relative to other scintillators such as cesium iodide and bismuth germanate (BGO). The goal of this work was to build and test a focused large-area pixelated "strip" CWO detector. A 361 × 52 mm scintillator assembly that contained a total of 28 072 pixels was constructed. The assembly comprised seven subarrays, each 15 mm thick. Six of the subarrays were fabricated from CWO with a pixel pitch of 0.784 mm, while one array was constructed from BGO for comparison. Focusing was achieved by coupling the arrays to the Varian AS1000 AMFPI through a piecewise linear arc-shaped fiber optic plate. Simulation and experimental studies of modulation transfer function (MTF) and DQE were undertaken using a 6 MV beam, and comparisons were made between the performance of the pixelated strip assembly and the most common EPID configuration comprising a 1 mm-thick copper build-up plate attached to a 133 mg/cm(2) gadolinium oxysulfide scintillator screen (Cu-GOS). Projection radiographs and CBCT images of phantoms were acquired. The work also introduces the use of a lightweight edge phantom to generate MTF measurements at MV energies and shows its functional equivalence to the more cumbersome slit-based method. Measured and simulated DQE(0)'s of the pixelated CWO detector were 22% and 26%, respectively. The average measured and simulated ratios of CWO DQE(f) to Cu-GOS DQE(f) across the frequency range of 0.0-0.62 mm(-1) were 23 and 29, respectively. 2D and 3D imaging studies confirmed the large dose efficiency improvement and that focus was maintained across the field of view. In the CWO CBCT images, the measured spatial resolution was 7 lp/cm. The contrast-to-noise ratio was dramatically improved reflecting a 22 × sensitivity increase relative to Cu-GOS. The CWO scintillator material showed significantly higher stability and light yield than the BGO material. An efficient piecewise-focused pixelated strip scintillator for MV imaging is described that offers more than a 20-fold dose efficiency improvement over Cu-GOS.

Development of solid-state avalanche amorphous selenium for medical imaging.

Active matrix flat panel imagers (AMFPI) have limited performance in low dose applications due to the electronic noise of the thin film transistor (TFT) array. A uniform layer of avalanche amorphous selenium (a-Se) called high gain avalanche rushing photoconductor (HARP) allows for signal amplification prior to readout from the TFT array, largely eliminating the effects of the electronic noise. The authors report preliminary avalanche gain measurements from the first HARP structure developed for direct deposition onto a TFT array. The HARP structure is fabricated on a glass substrate in the form of p-i-n, i.e., the electron blocking layer (p) followed by an intrinsic (i) a-Se layer and finally the hole blocking layer (n). All deposition procedures are scalable to large area detectors. Integrated charge is measured from pulsed optical excitation incident on the top electrode (as would in an indirect AMFPI) under continuous high voltage bias. Avalanche gain measurements were obtained from samples fabricated simultaneously at different locations in the evaporator to evaluate performance uniformity across large area. An avalanche gain of up to 80 was obtained, which showed field dependence consistent with previous measurements from n-i-p HARP structures established for vacuum tubes. Measurements from multiple samples demonstrate the spatial uniformity of performance using large area deposition methods. Finally, the results were highly reproducible during the time course of the entire study. We present promising avalanche gain measurement results from a novel HARP structure that can be deposited onto a TFT array. This is a crucial step toward the practical feasibility of AMFPI with avalanche gain, enabling quantum noise limited performance down to a single x-ray photon per pixel.

Development of an x-ray detector based on polymer- dispersed liquid crystal

The applications of active matrix flat-panel imagers (AMFPIs) in large-area x-ray imaging systems have increased over time but are still severely limited owing to its pixel resolution, complex fabrication processes, and high cost. As a solution, x-ray light valve (XLV) technology was introduced and expected to have a better resolution and contrast ratio than those of AMFPI, owing to its micrometer level of the LC cells and signal amplification by an external light source. The twisting angle of the LC cells was changed by charge carrier signals created in a photoconductor layer against x-rays, and the diagnostic images from XLV were acquired from the transmittance of the external light source. However, there was a possibility that the photoconductor layer may be crystallized or degenerated due to the application of high temperatures for sealing the LC layer during the fabrication process. To solve such problems, polymer-dispersed liquid crystals (PDLCs), which do not need high temperature for the sealing process of the LC layer, are used in this study instead of typical LC cells. A photoconductor and PDLC are combined to develop an x-ray detector. An external light source and optical sensor are used to investigate the light transmission of the PDLC . The PDLCs used in this paper do not need polarizers and are self-adhesive. Hence, the transmittance is very high in the transparent state, which allows for a linear x-ray response and sufficient dynamic range in digital radiography.

Sci—Thur PM: Imaging — 03: A novel Čerenkov detector based on air‐spaced light guiding taper for megavoltage x‐ray imaging

Electronic Portal Imaging Devices (EPIDs) have been used in radiation therapy and are still needed on linear accelerators (Linacs) equipped with kilovoltage cone beam CT (kV‐CBCT) or MRI systems. Recently a new concept of a high quantum efficiency (QE) Čerenkov Portal Imaging Device (CPID) for MV x‐ray imaging in radiation therapy was introduced. It relies on Čerenkov effect for x‐ray detection. The proposed design consisted of a matrix of optical fibres aligned with the incident x‐rays and coupled to an active matrix flat panel imager (AMFPI) for image readout. A weakness of such design is that too few Čerenkov light photons reach the AMFPI for each incident x‐ray and an AMFPI with an avalanche gain is required. In this work we propose to replace the optical fibers in the CPID with light guides without a cladding layer that are suspended in air. The air between the light guides takes on the role of the cladding layer found in a regular optical fiber. Since air has a significantly lower refractive index, a much superior light collection efficiency is achieved. Our Monte Carlo studies have shown that the modified new CPID has a QE more than an order of magnitude greater than that of current clinical systems and yet a spatial resolution similar to that of current flat‐panel based EPIDs. Furthermore it has been demonstrated that the new CPID does not require an avalanche gain in the AMFPI and is quantum noise limited at dose levels corresponding to a single Linac pulse.