By examining poly(3-hexylthiophene)-fullerene blend solar cells with controlled variations of the active layer using subgap external quantum efficiency combined with intensity dependent quantum efficiency at short circuit, a direct correlation between trap-assisted recombination parameters and the charge transfer state absorption strength is established. Most significantly, by comparing devices with different polymer molecular weight, regioregularity, C60 derivative chemistry, and film drying speed, we find that samples with higher trap-assisted recombination exhibit higher charge generation efficiency. Both findings are in support of the general view that the charge transfer states are involved in both processes. In addition, we find that the traps are full at about 100 mW/cm2, which suggests, together with the correlation with the charge transfer states, that the electrochemical potential difference in the bulk exceeds the open circuit voltage and that the loss of voltage is probably due to recombination associated with charge extraction at the electrodes.
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