Ab Initio GW Calculations Research Articles

Confined Monolayer Ag As a Large Gap 2D Semiconductor and Its Momentum Resolved Excited States.

2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By mapping momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (>1 eV) 2D semiconductor, consistent with ab initio GW calculations. The measured valence band dispersion matches the GW quasiparticle band structure. However, the conduction band dispersion shows an anomalously large effective mass of 2.4 m0. Possible mechanisms for this large enhancement in the "apparent mass" are discussed.

Simplified GW/BSE Approach for Charged and Neutral Excitation Energies of Large Molecules and Nanomaterials.

Inspired by Grimme's simplified Tamm-Dancoff density functional theory approach [Grimme, S. J. Chem. Phys. 2013, 138, 244104], we describe a simplified approach to excited-state calculations within the GW approximation to the self-energy and the Bethe-Salpeter equation (BSE), which we call sGW/sBSE. The primary simplification to the electron repulsion integrals yields the same structure as with tensor hypercontraction, such that our method has a storage requirement that grows quadratically with system size and computational timing that grows cubically with system size. The performance of sGW is tested on the ionization potential of the molecules in the GW100 test set, for which it differs from ab initio GW calculations by only 0.2 eV. The performance of sBSE (based on the sGW input) is tested on the excitation energies of molecules in Thiel's set, for which it differs from ab initio GW/BSE calculations by about 0.5 eV. As examples of the systems that can be routinely studied with sGW/sBSE, we calculate the band gap and excitation energy of hydrogen-passivated silicon nanocrystals with up to 2650 electrons in 4678 spatial orbitals and the absorption spectra of two large organic dye molecules with hundreds of atoms.

Large Spin-Orbit Splitting of Deep In-Gap Defect States of Engineered Sulfur Vacancies in Monolayer WS_{2}.

Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping. We report on the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS_{2} by a combination of CO-tip noncontact atomic force microscopy and scanning tunneling microscopy. Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states followed by vibronic sidebands provide a unique fingerprint of this defect. Direct imaging of the defect orbitals, together with abinitio GW calculations, reveal that the large splitting of 252±4 meV between these defect states is induced by spin-orbit coupling.

Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization.

We demonstrate the control of multiphoton electron excitations in InAs nanowires (NWs) by altering the crystal structure and the light polarization. Using few-cycle, near-infrared laser pulses from an optical parametric chirped-pulse amplification system, we induce multiphoton electron excitations in InAs nanowires with controlled wurtzite (WZ) and zincblende (ZB) segments. With a photoemission electron microscope, we show that we can selectively induce multiphoton electron emission from WZ or ZB segments of the same wire by varying the light polarization. Developing ab initio GW calculations of first to third order multiphoton excitations and using finite-difference time-domain simulations, we explain the experimental findings: While the electric-field enhancement due to the semiconductor/vacuum interface has a similar effect for all NW segments, the second and third order multiphoton transitions in the band structure of WZ InAs are highly anisotropic in contrast to ZB InAs. As the crystal phase of NWs can be precisely and reliably tailored, our findings open up for new semiconductor optoelectronics with controllable nanoscale emission of electrons through vacuum or dielectric barriers.

Coulomb-hole summations and energies forGWcalculations with limited number of empty orbitals: A modified static remainder approach

Ab initio GW calculations are a standard method for computing the spectroscopic properties of many materials. The most computationally expensive part in conventional implementations of the method is the generation and summation over the large number of empty orbitals required to converge the electron self energy. We propose a scheme to reduce the summation over empty states by the use of a modified static-remainder approximation, which is simple to implement and yields accurate self energies for both bulk and molecular systems requiring a small fraction of the typical number of empty orbitals.

Mechanism for optical initialization of spin in NV−center in diamond

Optical initialization of the negatively charged nitrogen-vacancy (NV${}^{\ensuremath{-}}$) center in diamond makes it one of the best candidates for realization of addressable spins in the solid state for quantum computing and other studies. However, its exact mechanism was not clear. We show that exact diagonalization of a many-electron Hamiltonian with parameters derived from ab initio GW calculations puts strong constraints on the mechanism. The energy surfaces of the low-energy many-body states and the relaxation processes of photoexcitation responsible for the optical initialization are calculated. Intersystem crossings are shown to be essential.

First-principlesGWcalculations for fullerenes, porphyrins, phtalocyanine, and other molecules of interest for organic photovoltaic applications

We evaluate the performances of ab initio GW calculations for the ionization energies and HOMO-LUMO gaps of thirteen gas phase molecules of interest for organic electronic and photovoltaic applications, including the C60 fullerene, pentacene, free-base porphyrins and phtalocyanine, PTCDA, and standard monomers such as thiophene, fluorene, benzothiazole or thiadiazole. Standard G0W0 calculations, that is starting from eigenstates obtained with local or semilocal functionals, significantly improve the ionization energy and band gap as compared to density functional theory Kohn-Sham results, but the calculated quasiparticle values remain too small as a result of overscreening. Starting from Hartree-Fock-like eigenvalues provides much better results and is equivalent to performing self-consistency on the eigenvalues, with a resulting accuracy of 2~4% as compared to experiment. Our calculations are based on an efficient gaussian-basis implementation of GW with explicit treatment of the dynamical screening through contour deformation techniques.

Seeing Many-Body Effects in Single- and Few-Layer Graphene: Observation of Two-Dimensional Saddle-Point Excitons

Significant excitonic effects were observed in graphene by measuring its optical conductivity in a broad spectral range including the two-dimensional π-band saddle-point singularities in the electronic structure. The strong electron-hole interactions manifest themselves in an asymmetric resonance peaked at 4.62 eV, which is redshifted by nearly 600 meV from the value predicted by ab initio GW calculations for the band-to-band transitions. The observed excitonic resonance is explained within a phenomenological model as a Fano interference of a strongly coupled excitonic state and a band continuum. Our experiment also showed a weak dependence of the excitonic resonance in few-layer graphene on layer thickness. This result reflects the effective cancellation of the increasingly screened repulsive electron-electron (e-e) and attractive electron-hole (e-h) interactions.

Ab initio GW calculations of the time and length of spin relaxation of excited electrons in metals with inclusion of the spin-orbit coupling

An ab initio method has been proposed for calculating the spin relaxation time of excited electrons in metals in the framework of the GW method with inclusion of the spin-orbit coupling. The time and length of spin relaxation in Al, Cu, Au, Nb, and Ta have been calculated. The concept of the spin-flip phase space has been introduced. It has been demonstrated that the ratio between the spin relaxation time and the lifetime of the excited electron is well explained within this concept. The time and length of spin relaxation in Nb appear to be considerably shorter than those in Al, Cu, and Au. These quantities in Ta are especially small in accordance with the strong spin-orbit coupling. A comparison of the results with the previous data on the time and length of spin relaxation due to the interaction with impurities and phonons shows that, at an excited electron energy of the order of 1 eV, the inelastic electron-electron scattering in the presence of spin-orbit coupling is a dominant mechanism of spin relaxation.