3D-TLM Method Research Articles

Thermal Analysis of Micro-Heaters using the 3D-TLM method and COMSOL Multiphysics software for MEMS based Gas Sensor

Thermal Analysis of Micro-Heaters using the 3D-TLM method and COMSOL Multiphysics software for MEMS based Gas Sensor

Genetic Algorithms and Particle Swarm Optimization Mechanisms for Through-Silicon Via (TSV) Noise Coupling

In this paper, two intelligent methods which are GAs and PSO are used to model noise coupling in a Three-Dimensional Integrated Circuit (3D-IC) based on TSVs. These techniques are rarely used in this type of structure. They allow computing all the elements of the noise model, which helps to estimate the noise transfer function in the frequency and time domain in 3D complicated systems. Noise models include TSVs, active circuits, and substrate, which make them difficult to model and to estimate. Indeed, the proposed approaches based on GA and PSO are robust and powerful. To validate the method, comparisons among the results found by GA, PSO, measurements, and the 3D-TLM method, which presents an analytical technique, are made. According to the obtained simulation and experimental results, it is found that the proposed methods are valid, efficient, precise, and robust.

Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA

A three-dimensional thermal simulation investigation for the thermal management of GaN-on-SiC monolithic microwave integrated circuits (MMICs) of consisting multi-fingers (HEMTs) is presented. The purpose of this work is to demonstrate the utility and efficiency of the three-dimensional Transmission Line Matrix method (3D-TLM) in a thermal analysis of high power AlGaN/GaN heterostructures single gate and multi-fingers HEMT SSPA (solid state power amplifiers). The self-heating effects induce thermal cross-talk between individual fingers in multi-finger AlGaN/GaN that affect device performance and reliability. Gate-finger temperature differences only arise after a transient state, due to the beginning of thermal crosstalk which is attributed to the finite rate of heat diffusion between gate fingers. The TLM method accounts for the real geometrical structure and the non-linear thermal conductivities of GaN and SiC in order to improve the realistic calculations accuracy heat dissipation and thermal behavior of the device. In addition, two types of heat sources located on the top of GaN layer are considered in thermal simulations: Nano-scale hotspot as a pulsed wave heat source under gate and micro-scale hotspot as a continuous wave heat source, between gate and drain. Heat diffusion however, occurs not only between individual gate fingers (inter-finger) in a multi-finger HEMT, but also within each gate finger (intra-finger). To compare results, a Micro-Raman Spectroscopy experience is conducted to obtain a detailed and accurate temperature distribution. Good agreement between the microscopic spectral measurement and TLM simulation results is observed by accepting an error less than 2.2% relative to a maximum temperature. Results show that the 3D-TLM method is suitable for understanding heat management in particular for microwave devices AlGaN/GaN HEMTs SSPA amplifier. TLM method helps to select and locates the expected hot spots and to highlight the need of thermal study pre-design in order to minimize the system-level thermal dissipation and lead therefore to higher reliability.

Full‐wave analysis of single and coupled striplines in multilayered cylindrical dielectrics using the 3D TLM method

AbstractIn this paper, an inhomogeneous, multilayered cylindrical stripline is analyzed using the 3D‐TLM method. Dispersion characteristics of dominant as well as higher‐order modes are obtained for single and coupled cylindrical striplines. Impedance characteristics for the dominant mode are also obtained for the same. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 298–302, 2006; Published online in Wiley InterScience (www. interscience.wiley.com). DOI 10.1002/mop.21331

Modeling of microwave applicators with an excitation through the wave guide using TLM method

In this paper, a real microwave applicator with a wave guide used to launch the energy from the source into the cavity is analyzed using 3D TLM method. In order to investigate the influence of the positions and number of feed wave guides to the number of the resonant modes inside the cavity, obtained results are compared with analytical results and results obtained by using TLM software with an impulse excitation as well. TLM method is applied to the both empty and loaded rectangular metallic cavity, and a very good agreement between simulated and experimental results is achieved.

Simulation of Berenger's perfectly matched layer with a modified TLM node

A modified TLM symmetrical condensed node is proposed which allows direct implementation of Berenger's PML in a variable mesh 3D-TLM method. A new scattering matrix is given and several tests are proposed to show the validity and efficiency of this modified node.

Electrical modeling of packaging discontinuities: A general methodology based on the three‐dimensional TLM concept

AbstractA general methodology for modeling packages using the three‐dimensional (3D) TLM method is presented. S parameters are calculated from reflected and transmitted signals, and electrical parameters of equivalent networks are extracted. Frequency domain results (up to 30 GHz) are presented for a microstrip right‐angle bend, a cross junction, and vias. The purpose of this article is to demonstrate the possibilities of using the 3D TLM method for electrical modeling in packaging applications.