2D GaAs Research Articles

Explanation of puzzling FQHE at the filling fraction 3/4 in a band-hole 2D system in GaAs

A recent experiment revealed an unexpected FQHE at filling fraction 3/4 in a GaAs 2D hole system, which contradicts the composite fermion model prediction and the observation of a compressible Hall metal-type state in a twin 2D electron system in GaAs at the same filling fraction 3/4 at almost same other conditions. This finding challenges conventional effective single-quasiparticle model for FQHE exposing its limitations. We explain this experimental observation within a multiparticle approach based on a topological cyclotron commensurability criterion. This allows to generalize Laughlin function for filling fractions from the complete FQHE hierarchy including observable FQHE states at even denominator fractions. The topological multiparticle approach helps to decipher a structure of composite fermions and provides their generalization for so-called enigmatic states including even denominator filling fractions, and also for quantum fractional Hall-type behavior in Chern topological insulators without a magnetic field.

Monte Carlo simulation of planar GaAs nanowire growth

The Monte Carlo model for the planar GaAs nanowire growth via the vapor–liquid-solid mechanism on GaAs substrate using a gallium droplet as a catalyst is realized. The effect of temperature, Ga and As2 deposition rates, substrate orientation and surface properties on the morphology of planar GaAs nanowires is considered. It is shown, that at the initial stages of nanowire growth, a 3D GaAs crystal is formed under a gallium droplet, which sets the nanowire growth direction. The range of temperatures and deposition rates of gallium and arsenic, which ensure the planar nanowire formation on the GaAs(111)A surface, is determined. The investigation of surface properties influence on the nanowire morphology showed that the arsenic diffusion influx into a gallium droplet is of critical importance for the planar GaAs nanowire growth. Ways for achieving a unidirectional growth of planar nanowires on singular and vicinal GaAs surfaces are proposed.

Van der Waals integration of phase-pure 2D perovskite sheets and GaAs nanowires for self-driven photodetector

Direct and non-destructive transfer of large-area phase-pure two-dimensional perovskite nanosheets for the construction of van der Waals heterostructures.

Next-generation even-denominator fractional quantum Hall states of interacting composite fermions.

The discovery of the fractional quantum Hall state (FQHS) in 1982 ushered a new era of research in many-body condensed matter physics. Among the numerous FQHSs, those observed at even-denominator Landau level filling factors are of particular interest as they may host quasiparticles obeying non-Abelian statistics and be of potential use in topological quantum computing. The even-denominator FQHSs, however, are scarce and have been observed predominantly in low-disorder two-dimensional (2D) systems when an excited electron Landau level is half filled. An example is the well-studied FQHS at filling factor [Formula: see text] 5/2 which is believed to be a Bardeen-Cooper-Schrieffer-type, paired state of flux-particle composite fermions (CFs). Here, we report the observation of even-denominator FQHSs at [Formula: see text] 3/10, 3/8, and 3/4 in the lowest Landau level of an ultrahigh-quality GaAs 2D hole system, evinced by deep minima in longitudinal resistance and developing quantized Hall plateaus. Quite remarkably, these states can be interpreted as even-denominator FQHSs of CFs, emerging from pairing of higher-order CFs when a CF Landau level, rather than an electron or a hole Landau level, is half-filled. Our results affirm enhanced interaction between CFs in a hole system with significant Landau level mixing and, more generally, the pairing of CFs as a valid mechanism for even-denominator FQHSs, and suggest the realization of FQHSs with non-Abelian anyons.

Electronic and optical properties of chemically modified 2D GaAs nanoribbons

We employed density functional theory calculations to investigate the electronic and optical characteristics of finite GaAs nanoribbons (NRs). Our study encompasses chemical alterations including doping, functionalization, and complete passivation, aimed at tailoring NR properties. The structural stability of these NRs was affirmed by detecting real vibrational frequencies in infrared spectra, indicating dynamical stability. Positive binding energies further corroborated the robust formation of NRs. Analysis of doped GaAs nanoribbons revealed a diverse range of energy gaps (approximately 2.672 to 5.132 eV). The introduction of F atoms through passivation extended the gap to 5.132 eV, while Cu atoms introduced via edge doping reduced it to 2.672 eV. A density of states analysis indicated that As atom orbitals primarily contributed to occupied molecular orbitals, while Ga atom orbitals significantly influenced unoccupied states. This suggested As atoms as electron donors and Ga atoms as electron acceptors in potential interactions. We investigated excited-state electron–hole interactions through various indices, including electron–hole overlap and charge-transfer length. These insights enriched our understanding of these interactions. Notably, UV–Vis absorption spectra exhibited intriguing phenomena. Doping with Te, Cu, W, and Mo induced redshifts, while functionalization induced red/blue shifts in GaAs-34NR spectra. Passivation, functionalization, and doping collectively enhanced electrical conductivity, highlighting the potential for improving material properties. Among the compounds studied, GaAs-34NR-edg-Cu demonstrated the highest electrical conductivity, while GaAs-34NR displayed the lowest. In summary, our comprehensive investigation offers valuable insights into customizing GaAs nanoribbon characteristics, with promising implications for nanoelectronics and optoelectronics applications.

Electronic structure and imaginary dielectric function for 2D GaAs doped with Si amphoteric impurities: A DFT study

Without a doubt, the impact of the discovery of 2D systems such as graphene has led to both theoretical and experimental investigations of a large number of materials such as Silicene, Borene, Arsenene, Phosphorene, just to mention some of the most emblematic ones, but other materials and its heterostructures are also of interest. From this point of view, in this work we present the band structure, density of states as well as the imaginary part of the dielectric function of a 2D GaAs system, by means of a density functional theory implementation. The aim of this study is to investigate the basic physical properties for a freestanding 2D GaAs sheet, as well as the effect of Si substitutional atoms, since it has an amphoteric nature in the GaAs, which means that depending on which atom is substituted, this can be an n- or p-type impurity atom. We report, as expected, that the levels do indeed appear near the conduction band (or valence) if the impurity is n-type (or p-type), respectively. Also the density of states due to the impurity is modified as well as the imaginary part of the dielectric function

Even-Denominator Fractional Quantum Hall State at Filling Factor ν=3/4.

Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs are those observed at even-denominator Landau level filling factors, as their quasiparticles are generally believed to obey non-Abelian statistics and be of potential use in topological quantum computing. Such states, however, are very rare and fragile, and are typically observed in the excited Landau level of 2D electron systems with the lowest amount of disorder. Here we report the observation of a new and unexpected even-denominator FQHS at filling factor ν=3/4 in a GaAs 2D hole system with an exceptionally high quality (mobility). Our magnetotransport measurements reveal a strong minimum in the longitudinal resistance at ν=3/4, accompanied by a developing Hall plateau centered at (h/e^{2})/(3/4). This even-denominator FQHS is very unusual as it is observed in the lowest Landau level and in a 2D hole system. While its origin is unclear, it is likely a non-Abelian state, emerging from the residual interaction between composite fermions.

Original architecture of an efficient all-optical 2 × 4 photonic crystals decoder based on nonlinear ring resonators

In this paper, we have presented an efficient original architecture of all-optical 2 × 4 photonic crystal decoder based on non-linear ring resonators. The fundamental structure is a square lattice of 2D GaAs rods, operating around the wavelength 1.55 µm. The proposed decoder is composed of a combiner with three input ports, where the port E is used for excitation and A1, A2 are the control ports, and an optical switch with four output ports, and it is a nonlinear DMEX. For the creation of a switch at the wavelength of 1.55 µm, we used nonlinear chalcogenide glass rods with a nonlinear Kerr coefficient equal to 9 × 10–17 m2/w. The switching intensity and structure size are 1 Kw/µm2, 27.12 µm × 17.96 µm, respectively. The contrast ratio is about 8.7. The maximum crosstalk and insertion losses are calculated to be about − 22.1 and − 4.5 dB. The maximum and minimum power levels for logic states 0 and 1 are 0.05 × P0 and 0.37 × P0 where P0 is the input power. The finite element method was used to perform the necessary calculations.

Hydrodynamics, viscous electron fluid, and Wiedeman-Franz law in two-dimensional semiconductors

Considering theoretically the transition between hydrodynamic and ballistic regimes in 2D semiconductors, we show that electrons in high-mobility 2D GaAs are by far the best system for the direct observation of collective hydrodynamic effects even in bulk transport properties independent of complicated transport features in narrow constrictions and small systems where Gurzhi phenomena are typically studied experimentally. We predict a strong hydrodynamics-induced generic violation of the Wiedeman-Franz law in bulk 2D GaAs systems for mobilities as modest as ${10}^{6}{\mathrm{cm}}^{2}/\text{Vs}$ and densities $1--5\ifmmode\times\else\texttimes\fi{}{10}^{11}{\mathrm{cm}}^{\ensuremath{-}2}$ in the temperature range of $T=1--40\phantom{\rule{0.16em}{0ex}}\text{K}$.

Record-quality GaAs two-dimensional hole systems

The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation doping, with mobility values as high as $5.8\times10^6$ cm$^2$/Vs at a hole density of $p=1.3\times10^{11}$ /cm$^2$, implying a mean-free path of $\simeq27$ $\mu$m. In the low-temperature magnetoresistance trace of this sample, we observe high-order fractional quantum Hall states up to the Landau level filling $\nu=12/25$ near $\nu=1/2$. Furthermore, we see a deep minimum develop at $\nu=1/5$ in the magnetoresistance of a sample with a much lower hole density of $p=4.0\times10^{10}$ /cm$^2$ where we measure a mobility of $3.6\times10^6$ cm$^2$/Vs. These improvements in sample quality were achieved by reduction of residual impurities both in the GaAs channel and the AlGaAs barrier material, as well as optimization in design of the sample structure.

Even-denominator fractional quantum Hall state in conventional triple-gated quantum point contact

The even-denominator states have attracted considerable attention owing to their possible applications in future quantum technologies. In this letter, we first report a 3/2 diagonal resistance, indicating the existence of a 3/2 state in a nanometer-sized triple-gated quantum point contact (QPC) fabricated on a high-mobility (not ultra-high-mobility) single-layer two-dimensional (2D) GaAs wafer. The center gate plays a crucial role in realizing the QPC’s 3/2 state. Our observation of the 3/2 state using a conventional QPC device, which is a suitable building block for semiconductor quantum devices, paves a new path for the development of semiconductor-based quantum technologies.

Density-dependent two-dimensional optimal mobility in ultra-high-quality semiconductor quantum wells

We calculate using the Boltzmann transport theory the density-dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe, and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the recently reported breakthrough in achieving a record 2D mobility for electrons confined in a GaAs quantum well. Comparing our theory with the experimentally reported electron mobility in GaAs quantum wells, we conclude that the mobility is limited by unintentional background random charged impurities at an unprecedented low concentration of $\ensuremath{\sim}{10}^{13}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$. We find that this same low level of background disorder should lead to 2D GaAs hole and 2D AlAs electron mobilities of $\ensuremath{\sim}{10}^{7}$ and $\ensuremath{\sim}4\ifmmode\times\else\texttimes\fi{}{10}^{7}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{2}/\text{V}\phantom{\rule{0.16em}{0ex}}\text{s}$, respectively, which are much higher theoretical limits than the currently achieved experimental values in these systems. We therefore conclude that the current GaAs hole and AlAs electron systems are much dirtier than the state-of-the-art 2D GaAs electron systems. We present theoretical results for 2D mobility as a function of density, effective mass, quantum-well width, and valley degeneracy, comparing with experimental data.

Fast Response GaAs Photodetector Based on Constructing Electron Transmission Channel

Low-dimensional GaAs photodetectors have drawn a great deal of attention because of their unique absorption properties and superior responsivity. However, their slow response speed caused by surface states presents challenges. In this paper, a mixed-dimensional GaAs photodetector is fabricated utilizing a single GaAs nanowire (NW) and a GaAs 2D non-layer sheet (2DNLS). The photodetector exhibits a fast response with a rise time of ~4.7 ms and decay time of ~6.1 ms. The high-speed performance is attributed to an electron transmission channel at the interface between the GaAs NW and GaAs 2DNLS. Furthermore, the fast electron channel is confirmed by eliminating interface states via wet passivation. This work puts forward an effective way to realize a high-speed photodetector by utilizing the surface states of low-dimensional materials.

Effect of Magnetic Field on the Energy Spectrum, Binding Energy and Magnetic Susceptibility of an Impurity in a 2D Gaussian Quantum Dot

The problem of on-center acceptor and donor impurities in a two-dimensional (2D) GaAs quantum dot in the presence of an externally applied magnetic field now modelled with Gaussian confinement and examined with the exact matrix diagonalization technic. Magnetic moment, susceptibilities are calculated after obtaining the energy spectrum of these impurities. I have compared the results of these impurities with parabolic confinement. I found an interesting phenomenon in the attendance of spin-Zeeman term, the ground state magnetic (GSM) moment and the GSM susceptibility of one electron system, donor and acceptor impurity systems demonstrate zero-temperature diamagnetic spikes owing to transitions in the orbital angular momentum (OAM). The number of spikes and the position of these spikes depend on the radius of the quantum dot and depth of the potential also. The low-lying binding energy levels have been studied by computing state away from the energies of donor impurity and an electron.

Photoresponse improvement of mixed-dimensional 1D-2D GaAs photodetectors by incorporating constructive interface states.

Mixed-dimensional optoelectronic devices bring new challenges and opportunities over the design of conventional low-dimensional devices. In this work, we develop unreported mixed-dimensional GaAs photodetectors by utilizing 1D GaAs nanowires (NWs) and 2D GaAs non-layered sheets (2DNLSs) as active device materials. The fabricated photodetector exhibits a responsivity of 677 A W-1 and a detectivity of 8.69 × 1012 cm Hz0.5 W-1 under 532 nm irradiation, which are already much better than those of state-of-the-art low-dimensional GaAs photodetectors. It is found that this unique device structure is capable of converting the notoriously harmful surface states of NWs and 2DNLSs into their constructive interface states, which contribute to the formation of quasi-type-II band structures and electron wells in the device channel for the substantial performance enhancement. More importantly, these interface states are demonstrated to be insensitive to ambient environments, indicating the superior stability of the device. All these results evidently illustrate a simple but effective way to utilize the surface states of nanomaterials to achieve the high-performance photodetectors.

Coulomb drag study in graphene/GaAs bilayer system with the effect of local field correction and dielectric medium

The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects.

Thermal and Quantum Melting Phase Diagrams for a Magnetic-Field-Induced Wigner Solid.

A sufficiently large perpendicular magnetic field quenches the kinetic (Fermi) energy of an interacting two-dimensional (2D) system of fermions, making them susceptible to the formation of a Wigner solid (WS) phase in which the charged carriers organize themselves in a periodic array in order to minimize their Coulomb repulsion energy. In low-disorder 2D electron systems confined to modulation-doped GaAs heterostructures, signatures of a magnetic-field-induced WS appear at low temperatures and very small Landau level filling factors (ν≃1/5). In dilute GaAs 2D hole systems, on the other hand, thanks to the larger hole effective mass and the ensuing Landau level mixing, the WS forms at relatively higher fillings (ν≃1/3). Here we report our measurements of the fundamental temperature vs filling phase diagram for the 2D holes' WS-liquid thermal melting. Moreover, via changing the 2D hole density, we also probe their Landau level mixing vs filling WS-liquid quantum melting phase diagram. We find our data to be in good agreement with the results of very recent calculations, although intriguing subtleties remain.

Heterostructure design to achieve high quality, high density GaAs 2D electron system with g-factor tending to zero

Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Landé g-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value g ≃ −0.44 to zero and even to positive values under sufficiently large hydrostatic pressure. Although this presents an intriguing platform to investigate electron-electron interaction in a system with g = 0, studies are quite limited because the GaAs 2DES density decreases significantly with increasing hydrostatic pressure. Here, we show that a simple model, based on pressure-dependent changes in the conduction band alignment, quantitatively explains this commonly observed trend. Furthermore, we demonstrate that the decrease in the 2DES density can be suppressed by more than a factor of 3 through an innovative heterostructure design.

Calculation of impurity density and electron-spin relaxation times in p-type GaAs:Mn

Magnetic semiconductors have aroused interest due to their various functionalities related to spintronic devices. Manganese (Mn) as a substitutional impurity in A3B5 semiconductors supplies not only holes, but also localized spins. The ejection of Mn atoms with an uncompensated magnetic moment leads to the appearance of ferromagnetic properties. The most suitable material characterized by long-term spin dynamics is n-type GaAs. In p-type GaAs, the spin relaxation time of electrons is generally much shorter. For purposes of this research, electron-spin relaxation times in 3D and 2D p-type GaAs were studied. Calculation of impurity densities and charge state of magnetic acceptors demonstrate the essential composition of the material. Comparison of theoretical and experimental data in optical-spin orientation of electrons reveal the longest spin relaxation time of 77 ns in 2D GaAs:Mn, less than twice the best time in the p-type 3D GaAs material.

Estimation of the magnitude of the Ruderman-Kittel interaction in 3d and 2d GaAs crystals

In this paper, estimates are made of the Ruderman-Kittel interaction in a gallium arsenide crystal and in GaAs quantum wells of varying widths. The calculation results indicate that this interaction may be weaker than the magnetic dipole-dipole interaction by an order of magnitude. Also discovered was a relatively strong dependence of this interaction on the level of doping.