In fabricating ferroelectric tunnel junction (FTJ) devices, it is essential to employ low-resistance metals as electrodes interfacing with two-dimensional (2D) ferroelectric materials. For FTJs with a top contact configuration, two interfaces for charge transport are present, namely the vertical interface between the metal electrode and the 2D ferroelectric material, and the lateral interface between the
electrode and the central scattering region. These interfaces significantly influence the tunneling electroresistance (TER) of FTJs. However, there exists a notable deficiency
in comprehension concerning the physics of charge transport at the interface. In this
work, we explore the interface transport properties in FTJs featuring a top contact configuration between metal and the typical α-In2Se3 monolayer. By employing the non-equilibrium Green's function method, we observe a TER ratio of 1.15 × 105% for
the Pd top contact interfacing with an α-In2Se3 monolayer. The significant TER effect is attributed to polarization-controlled interface transport, which is further
elucidated through an analysis of the transport mechanisms influenced by the out of-plane polarization of α-In2Se3 at the vertical interface and the in-plane polarization at the lateral interface. This investigation of the fundamental physical mechanisms
of polarization-controlled interface transport demonstrates significant potential for enhancing non-volatile memory devices.