The effect of Sn alloying on the casting structure of A356 aluminium alloy, especially on the morphology of eutectic silicon, is investigated in detail. With the increase of Sn content, the eutectic silicon gradually changed from sheet to fine coral, and the α-Al dendrites are significantly refined. Within the modified eutectic silicon, there are high density crossed stacking faults located in the <111>Si direction. The analysis reveals that these stacking faults are caused by the segregation of Al-Mg-Sn atomic clusters on the {111}Si growth plane, which hinders the stacking of Si atoms on the growth step and induces lateral growth of eutectic silicon. Mg2Sn phase formed by Sn and Mg enrichment will preferentially nucleate and grow in the {111}Si growth layer, which will also hinder the macroscopic growth of eutectic silicon. In this paper, the phenomenon of stacking faults induced by Al-Mg-Sn atomic clusters leading to the eutectic modification is proposed and investigated for the first time.
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