10W Power Amplifier Research Articles

Deep Neural Network for the Behavioral Modeling of Memory Effects and Supply Dependency on 10-W Nonlinear Power Amplifiers

In this paper, a deep neural network (DNN) model is proposed for the behavioral modeling of nonlinear power amplifiers with supply dependency. Although the conventional nonlinear model, such as the Volterra series, has high accuracy, it is not commonly implemented because of its complexity. However, with manageable complexity, the multidimensional input parameters of the proposed model ensure the modeling of the nonlinear behavior of power amplifiers with supply voltage dependency. The proposed model is trained by multi-tone signals on a 10-W power amplifier and validated by comparing the output spectrum and the third-order intermodulation (IMD3) of the model versus the measured data. The output spectrum shows less than 0.38 dB of error over a bandwidth of 10 MHz and input power from 11 dBm to 17 dBm, and the IMD3 error is less than 0.1 dB over the output power range.

Novel Microstrip Dual-Band Quad-Section Bandpass Filter using Radial Stub for Wireless Communication

In this paper, design, fabrication and experimental results of a dual-band bandpass filter for global system for mobile communications (GSM) in center frequency $$ f_{1} = 1.84\,GHz $$ and worldwide interoperability for microwave access (WiMAX) in center frequency $$ f_{2} = 3.5\,GHz $$ are presented. This dual-band filter is harmonically designed and used in a 10-W power amplifier. Also, the filter is required to suppress the second harmonic of the GSM standard because the associated frequency (3.68 GHz) is too close to the center frequency of WiMAX. The configuration of proposed dual-band bandpass filter comprises of a dual quad-section stepped impedance resonators with a J-inverter in between. This combination of resonators eliminate other interfering frequencies such as, the second and third harmonics. The lumped equivalent model of proposed dual-band bandpass filter is also presented and analyzed. A dual-band bandpass filter was implemented with good compactness and low insertion loss. A good agreement is obtained between the simulation and measurement results.

Ku 대역 대용량 공용데이터링크용 RF 송수신기 설계

본 논문에서는 유무인항공기에서 사용될 통달거리 200 km, 전송속도 45 Mbps급 데이터 전송장비의 RF 송수신기에 대해 다룬다. RF 송수신기는 Ku 대역에서 동작하도록 설계되었으며, 상/하향 변환모듈, 고출력 증폭 모듈, 전단 처리 모듈로 구성된다. 제안된 RF 송수신기의 성능을 만족시키기 위해 출력신호 레벨이 10 W급인 전력 증폭기가 요구되었으며, 이는 GaN 소자기반의 전력증폭기로 구현되었다. 또한, 적응형 전송속도 변환기능이 요구되었고, 이를 위해 다양한 대역폭의 신호를 수신할 때의 상호 주파수 간섭을 최소화하기 위하여 6종의 SAW 필터로 구성된 수신기 구조가 적용되었다. 시스템 요구사항의 만족 여부를 확인하기 위해 AWR 시뮬레이션 툴을 이용하였다. In this paper, we designed a RF transceiver operating up to 200 km operating range and 45 Mbps data rate. The RF transceiver operates in Ku band and composed of up/down converter, high power amplifier, front-end elements. To satisfy the operating range of RF transceiver, 10W power amplifier was required and realized by using GaN power amplifier. Moreover, to mitigate mutual interference for different bandwidth signals due to the adaptive transmission speed control function, SAW filter bank structure was used. To verify system requirement satisfaction AWR simulation tool was used.

Accurate large-signal characterization of LDMOSFET transistor in package

In this article, we present an accurate characterization of the RF LDMOSFET transistors for the extracting of the large-signal model. They are generally available encapsulated in package. A measurement of the package parameters are made only by removing the semiconductor chip. The transistor is then characterized by conventional method. The same component can be used in the desired function, thereby avoiding the technological dispersions. The LDMOSFET transistor used is a BLF2043F (NXP semiconductors). To validate our method, we implemented a 2.5-GHz 10-W power amplifier. The measured and simulated results match very well. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:575–579, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25800