In this whitepaper, the Manufacturing Technical Committee of the Product Quality Research Institute provides information on the common, best practices in use today in the development of high-quality chemistry, manufacturing and controls documentation. Important topics reviewed include International Conference on Harmonization, in vitro–in vivo correlation considerations, quality-by-design approaches, process analytical technologies and current scale-up, and process control and validation practices. It is the hope and intent that this whitepaper will engender expanded dialog on this important subject by the pharmaceutical industry and its regulatory bodies.

In electronic waste recycling industry, printed wire boards (PWBs)/integrated chips (ICs) recycling is one of the most challenge tasks due to the fact that PWBs/ICs are diverse and complex in terms of materials and components makeup,as well as the original equipment manufacturing processes. In this paper, we will present environmental benign solution to recover valuable metals from PWB and integrated circuit chips (ICs) dissembled from waste PWB, based on green chemistry methodologies. We will demonstrate that the process/chemistry can selectively separate and recover precious metals from base metals. The 95%-99% recovery rate of precious metals can be achieved from the recycling of PWB and integrated circuit chips.

A wet etch/cleaning formulation with semi-aqueous composition was described here. The solution could remove the ashed SOG and its residues quickly (> 900A/min) in low process temperature and also showed compatibility for high-K/metal gate integration scheme including TiNx, TaNx, and work-function metals would contain aluminum

Gases at high drive pressure can initially dissolve into the fluids used in lithography and other critical processes during the fabrication of integrated circuits. In the low pressure portion of the dispense train, the dissolved gases can revert to bubbles. These bubbles can: 1. Affect the compressibility of the working fluid and change the flow characteristics of the dispense heads which require frequent re-tuning of the coating tools. 2. Contribute to defect formation if the bubbles are trapped on the surface of the wafer. Photosensitive Polyimides (PI) have high viscosities (1000 to 20,000 cP). Because of the high viscosity, high-powered, expensive pumps are needed to effectively remove the fluid from its container. Suction from the pump filling cycle easily causes cavitation, which can create flow rate variability, and micro-bubble formation. It is a common practice to apply pressure to the PI resists to minimize cavitation in the pump. The trade-off to this practice is the entrainment (dissolution) of the drive gas into the resist and the risk of micro-bubbles forming later in the dispense train. In the current study, ATMI measured the effects of two methods of pressure dispense from the container on the amount of gas entrained in a viscous fluid: (1) indirect pressure dispense and (2) direct pressure dispense. The main analytical method employed to measure the amount of dissolved gases is a gas chromatograph (GC), which can measure the concentration of gases dissolved in a volatile fluid. It is not suitable to measure gases in low volatility fluids. The new test method developed, however, is capable of measuring dissolved gases in low volatility fluids.

A review of bubble energetics is presented to provide background into gas saturation and bubble formation in semiconductor resists. Nitrogen was used as a drive gas to push liquid out of several package materials versus a mechanical pump. The incorporation of dissolved gas was measured and a barrier liner was found to be superior versus a bottle with no liner. We have demonstrated that a pressure dispense package with an appropriate barrier liner provides a means to deliver lithographic chemicals and resist without the use of a mechanical pump.

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Present work focuses on the process characteristics and material properties of electroless deposited CoWP, and CoWB thin layers. Such material properties as atomic and phase composition of thin Co alloys are compared. Consumption rates of the bath constituents are analyzed. Line resistance change of Cu interconnects capped with CoWP and CoWB is shown. Comparison of two types of capping layers and analysis of their process formation are presented. The capability of the selective capping layer formation on narrow Cu lines has been demonstrated.

Photomask resist strip processes have traditionally used the sulfuric-peroxide-mix, known as SPM, or Piranha. This paper details a recent investigation into the utilization of solvent-based resist strip solutions applied to photomask resist stripping. Studies of two commercially available solvents are documented in this report: one formulated for positive resist stripping [Chem A, which contains a primary amine, glycol and is semi-aqueous], and another rated for 'hard-to-remove' positive resist stripping [Chem B, which contains glycol ethers, organic cyclics -- all proprietary]. Resist types, such as IP3600, and most Chemically Amplified Resists (CAR) will strip easily with any of the chemicals mentioned, however, other adverse effects may deter one from using them. The screening process employed in this study monitors effects of processing on EAPSM phase and transmission, AR layer reflectivity changes and surface ionic analytical comparisons. Chem A and B will show similarly low phase and transmission shifts at higher temperature and longer process times, while reflectivity data shows lower level changes associated with the use of Chem A (favorable). As for surface ionic contamination: on F and Cl contaminated surfaces, Chem A shows favorable results. Overall Chem A seems to be the appropriate choice for more thorough investigation in a production mask-making environment.