The4H-SiCvert ical double Imp lanted MOSFET (DIM OS) offers advantages over conventional silicon devices, enabling high system efficiency and/or reduced system size, weight and cost through its higher frequency operation. Co mpared to the best silicon IGBTs, the SiC device will improve system efficiency up to 2% and operate at 2-5 times the switching frequencies.In this paper we present an equivalent circuit Spice of 4H-SiC DIM OSFET fo r a wide temperature range. Simu lation for DC characteristics (I-V) of the SiC M OSFET with the exact device geometry is carried out using the commercial device simu lator Spice. All Sp ice parameters are extracted fro m the measurements, and a SPICE model for the DIMOS transistor has been developed and implemented in the circuit simu lator Orcad PSpice 10.5. The temperature dependent behaviour was simulated and analysed. A good agreement between the Spice simulat ion and analytical model evaluation for SiC DIMOS is demonstrated. Model parameters can be adjusted to obtain an optimu m device to be used in power system applications.

In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.

On promising area application of asynchronous is in Heterogeneous Systems (synchronous and asynchronous modules mixed). Asynchronous controllers are quite used in heterogeneous systems. The specification of theses controllers requires two types of signals: level sensitive signals that are used as conditionals and transition sensitive signals. Another requirement is to describe concurrency between inputs/outputs. The Multi-Burst Graph (MBG) specification allows to describing these controllers in a compact form and it is familiar to designers of digital circuits. This paper proposes a generalization in the MBG specification to increase the ability to describe the interaction between inputs/ outputs, i.e. increase the concurrency between them. This paper also proposes a method that starts from Generalized MBG specification and implements its hazard-free controllers on FPGAs. These devices have been mainly used for design of synchronous controllers. However, it is difficult to design asynchronous controllers on FPGAs, because the circuit may suffer from hazard problems. The method proposed implements this class of asynchronous controllers on FPGAs which are based on Look-Up Table (LUT) architectures. By doing this, the asynchronous circuits besides their intrinsic advantages over synchronous ones may also take advantage of integration, lower costs and short-time design associated with FPGA designs.