ZrO2-doped Zn0.5Ti0.5TaO4 microwave dielectric ceramics with low dielectric loss and excellent temperature stability

Abstract

Herein, the weight fraction of the tri-rutile and ixiolite structures in Zn0.5Ti0.5-xZr x TaO4 (ZTZTO x , 0 ≤ x ≤ 0.10) was successfully adjusted by the substitution of Ti4+ ions by Zr4+.Zn0.5Ti>0.48Zr0.02TaO4 ceramics exhibited excellent dielectric properties when sintered at 1290°C with τ f = -3.73 ppm/°C, εr = 33.22, and Q×f=79,266 GHz, respectively. As the amount of Zr4+- substitution increases, the tri-rutile structure content gradually decreases, and the tri-rutile structure is completely transformed into an ixiolite structure at 0.06 ≤x. This leads to the grain size showing a trend of decreasing and then increasing. Non-intrinsic factors suggest that ixiolite structures with lower εr and higher Q×f values are the main cause of the change in dielectric properties. Intrinsic factors suggest that an increase in the number of Raman characteristic waves leads to a gradual decrease in εr . The damping loss of the lattice vibrational behavior decreases, leading to a gradual increase in Q×f. In conclusion, Zn0.5Ti0.48Zr0.02TaO4 ceramics with aτf close to zero have good prospects for application in microwave communications.