Abstract
Epitaxial crystallization of Au-implanted amorphous Si layers has been studied over the temperature range 515–735 °C. During crystallization, Au is zone refined into the remaining amorphous layer, resulting in an Au concentration that increases as the layer becomes thinner. The rate of solid phase epitaxy increases rapidly with Au concentration over the range from 0.15 to approximately 0.50 at. %. At higher concentrations the rate enhancement diminishes and above 0.70 at. % severe retardation of epitaxy is observed to occur.
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