Abstract

AbstractPolysilicon-on-alumina films have been zone-melt recrystallized with a graphite strip heater. High levels of in-plane stress and stress concentrations due to alumina grain pull-outs cause tensile failure at high temperature. This can be avoided by phosphorus incorporation into an SiOo layer between the polysilicon film and the alumina substrate. The glass layer provides high-temperature viscoelastic strain relief and planarizes the alumina substrate. Double-crystal diffractometry and anisotropic etch techniques indicate that the recrystallized silicon-on-alumina film texture is (100).

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call