Abstract
ZnTe films with different thickness were grown onto (001) Si substrates using isothermal closed space sublimation by alternated sublimation of Zn and Te sources. As a result ZnTe polycrystalline films were obtained with a strong [111] orientation as revealed by X-ray diffraction patterns. The reason for this polycrystalline nature of the samples comes from incomplete removal of SiO 2 from the Si substrate surface. A preferential adsorption of Te in the first stages of the growth was concluded from Rutherford backscattering spectra analysis.
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