Abstract
ZnTe-InAs heterojunctions are prepared by the liquid-phase epitaxial growth technique. InAs layers are grown from the In solutions on ZnTe substrates. The study on the optical transmittance reveals that InAs-ZnTe mixed-crystal layer exists at the boundary. The ZnTe-InAs heterojunction diodes show SCLC characteristics at forward bias. It is suggested that in the ZnTe substrates, high-resistivity layers are formed by the diffusion of In from the InAs layers. The forward I–V characteristics can be explained by the hole space-charge limited flow in the high-resistivity layers. By using Lampert theory, it is concluded that this layer has a trap density of about 1×1014cm-3 and the trap level is located about 0.38 eV above the valence band edge.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
