Abstract
We report on room temperature operation of blue-green ZnSe-based electron-beam pumped semiconductor lasers grown by molecular beam epitaxy. The lowest ever reported values of threshold current density in transverse excitation geometry (3-3.5 A/cm 2 ), which is independent of the electron beam energy in the 15-35 kV range, have been obtained. Possible ways to improve the electron-beam pumped laser characteristics are discussed.
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