Abstract
ZnS x Se 1− x ( x=0.08–0.12) substrates transparent for ZnSe QW emissions were used for the growth of ZnSe/ZnMgSSe structures. The FWHM of X-ray rocking curves of the substrates were 36–38 arcsec. Etching the substrate in diluted HCl to remove the oxide layer was performed as final treatment before the epitaxy. A variety of ZnSe/ZnMgSSe QW structures were grown by low-pressure MOVPE. All structures grown have strong ZnSe QW emissions in their PL spectra. For a MQW structure with intended well thicknesses of 4, 6 and 12 nm, well-resolved peaks of all QWs were observed.
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