ZnSe horizontal traveling solvent growth using selenium solution

Abstract

ZnSe single crystals were grown using the horizontal traveling solvent method (TSM) with selenium (Se) solution. The best FWHM of the X-ray rocking curve showed 26arcsec and the lowest etch pit density was 1.4×105/cm2. The ZnSe crystals exhibited an I1d peak in a photoluminescence spectrum, implying little unintentional doping of impurities. The relationship between the ZnSe crystallinity and the dissolution time of ZnSe source implies a small diffusion coefficient for the liquid Se. The ZnSe molecule diffusion coefficient in liquid Se around 1060°C was estimated to be (3.3±0.6)× 10−10m2/s, derived from the dissolution time. The small diffusion coefficient may be due to the slow movement of ZnSe molecules in an associated solution.