Abstract
The data of ZnSe:Al crystal growth are reported in the context of the Al doping influence on the crystal structure. The crystals were grown from the melt by the Bridgman method under Ar pressure in the range 12 to 15MPa, the temperature of the melt was up to 1670°C. The samples with the Al dopant concentration in the range 0-0.6mol% exhibited twinned 3C structures, but for 0.68±0.8mol% the 10H polytype occurs. The influence of Al doping is one order of magnitude lower when compared to this influence on ZnS
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