Abstract
A write-once-read-many-times(WORM) bistable device was prepared,in which ZnS quantum dots doped poly-4-vinyl-phenol(PVP) layer was sandwiched between ITO anode and Al cathode.Current-voltage(I-V) curves showed a switching characteristic with a large ON / OFF ratio of 10 4.The electrical bistability properties and charge-transport mechanisms were discussed in detail based on I-V characteristics.The conduction mechanisms in both ON-and OFF-states were discussed in terms of different theoretical models.The data-retention characteristics of the current-time(I-t) curve exhibited permanent retention ability at ambient conditions.
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