ZnO/NiO diode-based charge-trapping layer for flash memory featuring low-voltage operation.

Abstract

A stacked oxide semiconductor of n-type ZnO/p-type NiO with diode behavior was proposed as the novel charge-trapping layer to enable low-voltage flash memory for green electronics. The memory performance outperforms that of other devices with high κ and a nanocrystal-based charge-trapping layer in terms of a large hysteresis memory window of 2.02 V with ±3 V program/erase voltage, a high operation speed of 1.88 V threshold voltage shift by erasing at -4 V for 1 ms, negligible memory window degradation up to 10(5) operation cycles, and 16.2% charge loss after 10 years of operation at 85 °C. The promising electrical characteristics can be explained by the negative conduction band offset with respect to Si of ZnO that is beneficial to electron injection and storage, the large number of trapping sites of NiO that act as other good storage media, and most importantly the built-in electric field between n-type ZnO and p-type NiO that provides a favorable electric field for program and erase operation. The process of diode-based flash memory is fully compatible with incumbent VLSI technology, and utilization of the built-in electric field ushers in a new avenue of accomplishing green flash memory.