Abstract
In the past decade, light-emitting diodes (LEDs) based on wideband gap semiconductor have attracted considerable attention due to its potential optoelectronic applications in illu‐ mination, mobile appliances, automotive and displays [1]. Among the available wide band gap semiconductors, zinc oxide, with a large direct band gap of 3.37eV, is a promising can‐ didate because of characteristic features such as a large exciton binding energy of 60meV, and the realization of band gap engineering to create barrier layers and quantum wells with little lattice mismatch. ZnO crystallizes in the wurtzite structure, the same as GaN, but, in contrast, large ZnO single crystal can be fabricated [2]. Furthermore, ZnO is inexpensive, chemically stable, easy to prepare and etch, and nontoxic, which also make the fabrication of ZnO-based optical devices an attractive prospect. The commercial success of GaN-based op‐ toelectronic and electronic devices trig the interest in ZnO-based devices [2-4].
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