Abstract
ZnO nanowires were synthesized by chemical vapor deposition method,and single ZnO nanowire semiconductor devices with Ohmic contact electrodes were fabricated using the micro grid template method. The electrical properties of the device were investigated at low temperatures. The results show that there are two types of transport mechanism: thermal activation and nearest-neighbor hopping mechanism from 300 to 60 K. The properties of ultraviolet light response and recovery of the device were tested at 300,200,and 100 K,respectively. The results show that the sensitivity of the device to ultraviolet is improved at low temperature,and the current recovery time increases with the temperature falling down.
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