ZnO Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition: Material Properties Within and Outside the “Atomic Layer Deposition Window”

Abstract

ZnO thin films and nanostructures are applied in various devices due to their interesting optical and electrical properties. Atomic layer deposition (ALD) of ZnO offers unique advantages such as precise thickness control, uniformity, and conformality. Using reactive plasma species as the co‐reactant (PE‐ALD) allows further enhancement of the material characteristics and tunable properties. The substrate temperature has been reported to be the most influential parameter in this technique, as it affects the growth per cycle (GPC) and material properties. However, an investigation on how the film properties are linked to the GPC is lacking in the literature. Herein, the temperature dependence of several material properties is found closely related to the GPC. The preferential crystal orientation switches from (100) to (002) up to the constant region of the GPC versus temperature, the so‐called ALD window. Refractive index and mass density show different slopes in temperature regions outside and within the ALD window. Excitonic absorption is only found for films prepared within the ALD window, and the resistivity drops rapidly above the ALD window. Following these results, more insights can be gained on the ALD growth (especially the role of the ALD window) and ideal temperature ranges for specific applications.