Abstract
ZnO thin films were deposited using a RF-sputtering technique on several kinds of LiNbO 3 substrates having the surfaces prepared by cutting at specified crystalline orientations. The substrate temperatures during deposition were changed from 300 to 703 K in various oxygen–argon atmosphere. From X-ray diffraction (XRD) pattern, a strong ZnO [002] reflection peak was obtained for the film on z-cut LiNbO 3 substrate. The peak intensity was dependent on gas flow rate of oxygen to argon, substrate temperature and anneal temperature. When the film was deposited on z-cut LiNbO 3 substrate at 603 K in Ar (80%) and O 2 (20%) gas, it showed the crystalline growth highly oriented at (0 0 2) direction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
