Abstract

 
 
 Highly transparent ZnO thin films were prepared using spray pyrolysis of a solution containing Zn(OAc)2 and SbC13 on glass substrates kept at 400ºC. Further, these films were doped with Sb by in situ process by dissolving SbCl3 in the spray solution. Crystallographic structural analysis was done using X-ray diffractometer and elemental analysis was done using Auger electron spectrometer. Morphological characterization was done by atomic force microscopy. The UV-Vis transmittance measurements indicated that the films were 90% transparent in the visible region. The value of band gap energy calculated from UV-Vis characterization showed that undoped and Sb doped films have slightly different band-gap energies. The electrical resistivity measurements showed a substantial change in the resistance of the ZnO thin films due to Sb doping.
 
 
Highlights
Zinc oxide (ZnO) has been an extensively studied wide band gap semiconducting material [1]
We report the formation of ZnO thin films by spraying a solution containing Zn(OAo), on glass substrates at 400 *C
ZnO thin films were formed by decomposition of zinc acetate on the substrates kept at 400 *C
Summary
Zinc oxide (ZnO) has been an extensively studied wide band gap semiconducting material [1]. ZnO thin films of 90 - 95 % transmittance were deposited on glass substrate at 490 “C by spraying a solution containing zinc acetate [6]. Preparation of ZnO thin films using zinc chloride solution and their doping with Sn or/and Al were reported [11,12,13,14]. We report the formation of ZnO thin films by spraying a solution containing Zn(OAo), on glass substrates at 400 *C. Doping of these films with Sb by mixing SbCl; with the precursor solution is achieved. The electrical resistivity measurements revealed a substantial change in the resistance of the ZnO thin films due to Sb doping
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