Abstract
ABSTRACTThe influence of the integration of ultra-thin layer of different metals (Al, Cu, Sn, Te, Pb and Au) with the c-axis oriented ZnO thin film on the ultraviolet (UV) photoresponse is investigated. The transfer of electrons from the metal layer to the semiconductor at the interface compensate the surface states which otherwise takes electrons from the interior of ZnO layer and thereby increases the conductivity under UV illumination. The Sn/ZnO sample exhibits a responsivity of the order of 8.5 KV/W at a low UV intensity of 140 μW/cm2 (⎻ = 365 nm) with a fast rise and fall time of 105 and 400 ms respectively.
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