ZnO/SiO2 encapsulation of perovskite nanocrystals for efficient and stable light-emitting diodes

Abstract

Achieving long-term stable lead halide perovskite nanocrystals (PNCs) in light-emitting devices remains a significant challenge because of their fast degradation upon exposure to light, moisture, and oxygen. Here, we report a facile one-pot strategy to realize the growth of crystalline ZnO/SiO2 dual-layer encapsulation on CsPbBr3 PNCs. The encapsulation provides the PNCs with robust surface passivation to withstand the harsh condition in hybrid light-emitting diodes (LEDs) with an on-chip packaging structure. The PNCs/ZnO/SiO2 could preserve 100 % of their initial photoluminescence intensity after 500 h of continuous irradiation under a 9.6 W cm−2 blue laser. The fabricated green- and white-LEDs displayed constant light intensity at 80 % of their initial value with continuous driving at 10 mA for 500 h. We believe the excellent stability of the ZnO/SiO2 encapsulated PNCs could strongly promote the development and application of perovskite-based light-emitting and other optoelectronic devices.