Abstract
As a kind of semiconducting and promising material, ZnO has been extensively used in dye-sensitized solar cells (DSSCs). Quantum dot sensitized solar cells (QDSSCs) has more potential to increase the efficiency of solar cells compared with DSSCs. Here we developed a simple and effective way to fabricate ZnO porous plate films by electrochemical deposition and anneal in air on ITO-coated glass substrates. CdS quantum dots were attached to the surface of the porous plate films by chemical bath deposition technique. Quantum dot-sensitized ZnO porous plate films solar cells exhibited short-circuit current ranging from 0.22-0.57mA/cm2 and open-circuit voltage of 0.42 -0.57V when illuminated with 100 mW/cm2 simulated AM 1.5 G irradiation.
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