Abstract
A unique approach of ZnO nanowire growth mediated via reduction of ZnO by H2 is presented. It is less complex and more controllable than the conventional carbothermal method (reduction of ZnO by C). The chemical vapor deposition system employed allows precise control of all deposition parameters: (1) source and substrate temperatures, (2) carrier gas compositions, flow and pressure of several gases, (3) growth along a large range of distances from the source. In situ residual gas analysis allows real-time feedback of the process reactions. Controlled, stabilized, homogenous growth (characterized by scanning electron microscopy and x-ray diffraction) over relatively large areas is demonstrated.
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