Abstract
The memory characteristics of ZnO nanowire-based nano-floating gatememory (NFGM) with Pt nanocrystals acting as the floating gate nodeswere investigated in this work. Pt nanocrystals were embedded betweenAl2O3 tunneling and control oxide layers deposited on ZnO nanowire channels. For arepresentative ZnO nanowire-based NFGM with embedded Pt nanocrystals, athreshold voltage shift of 3.8 V was observed in its drain current versus gate voltage(IDS–VGS) measurements for a double sweep of the gate voltage, revealing that the deep effectivepotential wells built into the nanocrystals provide our NFGM with a large charge storagecapacity. Details of the charge storage effect observed in this memory device are discussedin this paper.
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