Zno Nano-Stripes Synthesized using Photoelectrochemical Wet Etching Method

Abstract

To date, no approaches have been reported to fabricate the ZnO nano-stripes arrays on zinc foil substrate. In this method, zinc (Zn) foil was applied as substrates. The ZnO nano-stripes arrays on zinc foil substrate were prepared via photoelectrochemical (PEC) wet etching method without using templates and catalysts. To prepare ZnO nano-stripes structures, the samples were dipped into a mixture of HNO3:Ethanol (1:5) with current densities of 127 mA/cm2, and subjected to external illumination from a 100W lamp. The constant etch time is 30 min. After etching, the surface morphology and the nano-stripes structure of the ZnO films were characterized by scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). XRD pattern confirmed that the hexagonal wurtzite structure of ZnO nano-stripes were of polycrystalline structure. The optical properties of the ZnO nano-stripes arrays were characterized by Raman and photoluminescence spectroscopies at room temperature (RT). Micro-Raman results showed that A1(LO) of hexagonal ZnO nano-stripes have been observed at 520 cm-1. PL spectrum peak is obvious at 368 cm-1 for ZnO film grown on zinc foil substrate. The PL spectrum peak position in ZnO nano-stripe is blue-shifted with respect to that in unstrained ZnO bulk (381nm). This can be clarified by the approximately smaller statistical area spreading of the nano-stripes. Nano-stripes ZnO can be used as a buffer or intermediate layer to lessen substrate-induced strain, similar to porous silicon.