Abstract
ZnO:Mn thin films are grown by the metal organic chemical vapor deposition technique. Mn (x) varies in the 0 < x < 0.44 range. Vegard's law has been verified for the lattice parameters. Electron paramagnetic resonance (EPR) measurements prove the substitutional incorporation of Mn2+ on zinc sites. The behavior of the EPR line width regarding temperature is discussed. All ZnO:Mn layers show antiferromagnetic interaction and a J(1)/k(B)=-15 K effective exchange constant. The optical band gap of ZnO:Mn increases with the manganese concentration. Raman spectroscopy reveals a Mn-related scattering band.
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