Abstract
Abstract: ZnO quantum dot (QD) semiconductor optical amplifier (SOA) is studied theoretically using non-Markovian gain model. SOA performance is then studied by rate equations model. These QD-SOAs have shown to have High gain, low noise figure, and polarization insensitivity. This article appraised patent and patent application related to semiconductor optical amplifier. Keywords: Quantum dot (QD), ZnO, semiconductor optical amplifier (SOA), non-Markovian gain, small-signal gain, rate equations, ground state (GS), excited state (ES), noise figure. 1. INTRODUCTION Zinc oxide (ZnO) has been identified as a promising material for optoelectronics applications ranging from ultra-violet (UV) to red wavelengths due to its large fundamental direct bandgap, high thermal conductivity, high luminous efficiency and mechanical and chemical robustness. ZnO also has an advantage of a large exciton binding energy about 60meV, which assures more efficient excitonic emis-sion at higher temperatures [1, 2]. Various wide-gap semi-conducting materials have been adopted to construct ZnO-related heterostructures. Mg
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