Abstract
We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (∼110 cm2/V s), superior subthreshold swing (∼200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2Zn0.8O shell layer are presumably responsible for the highly enhanced device performance.
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