Abstract
We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 1016–1017cm−3 and mobility of 1–10cm2V−1s−1. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40mA and defect-related emissions in the blue-yellow spectrum range.
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