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Abstract
We have developed zinc oxide (ZnO) film and CO 2 plasma treatment for the use as an intermediate layer between top and bottom cell in order to improve performance of micromorph silicon solar cells. The CO 2 plasma treatment was performed by very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) technique, and the ZnO interface layer was deposited by DC-magnetron sputtering method. Effects of both techniques on the cell performance were comparatively investigated. We found that the ZnO interface layer and CO 2 plasma treatment were effective in enhancing V oc, J sc as well as FF of the cells as the same. The micromorph solar cells using an optimized ZnO interface layer and the CO 2 plasma treatment indicated initial conversion efficiency of 11.4% and 11.2%, respectively. Experimental results indicated that the CO 2 plasma treatment technique is more suitable for using in cell fabrication process than the ZnO interface layer since it is simpler and has no negative impact of possible shunts.
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