ZnO/GaN Heterostructure as Ultraviolet Photodetector Fabricated by One-Step Aqueous Method.

Abstract

ZnO thin films were fabricated on p-GaN substrate with zinc acetate as precursors by one-step aqueousmethod in this paper. The morphological and structural properties of ZnO/GaN heterostructure were studied. Meanwhile, the ultraviolet photodetector (UV) device based on ZnO/GaN heterostructure was fabricated and showed excellent UV response. The results demonstrate that the fabrication of large-scale ZnO/GaN heterostructure was greatly facilitated with relatively low cost by one-step growth method.