Abstract
Abstract ZnO:Eu films on silicon wafers were prepared by a simple sol–gel route. It was found that in order to achieve pure ZnO crystal phase, the annealing temperature could not be higher than 850 °C. The pronounced peaks in the photoluminescence (PL) spectra of the ZnO:Eu films were originated from 5 D 0 → 7 F 0,1,2 transitions. It is somewhat unexpected that the PL emission from the 5 D 0 → 7 F 0 transition, which is principally believed to be forbidden, was remarkable. In order to explain this phenomenon, it is proposed that a majority of incorporated Eu 3+ ions in the films occupy the interstitial sites of ZnO host.
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