Abstract
AbstractZinc oxide crystals were grown by Chemical Vapour Transport using Contactless Crystal Growth technique. To apply powdered source material and long ampoules, modified temperature field was applied. 2.5 cm diameter crystals were obtained. The largest grains yielded 0.5 cm2 single crystalline substrates. The FWHM of the rocking curve was usually exceeding 60 arcsec, but areas with FWHM as low as 29 arcsec were also found. The electrical p‐type conductivity of As‐doped crystal was identified as increased arsenic content grain surface effect. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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